Temperature controllable base table of semiconductor coating equipment

Abstract

The invention relates to a temperature controllable base table of semiconductor coating equipment and belongs to the technical fields of semiconductor film deposition application and manufacturing. The temperature controllable base table internally comprises a base table medium heat value exchange cavity so that the temperature of the base table can be controlled rapidly, accurately and evenly. The problems that the heat exchange efficiency and capacity of existing semiconductor coating equipment are low and the wafer temperature is not uniform enough and according a film fails due to the fact that the temperature of the base table is increased too fast and decreased slowly in the technique process are solved. The base table comprises an upper plate body and a lower plate body. A sealing cavity is formed between the upper plate body and the lower plate body. A medium can be introduced into the sealing cavity for temperature adjustment. A medium inlet and a medium outlet are formed in the base table to be connected into the sealing cavity and used for circulation of the medium. Through the structure of the system, the temperature of the base table can be automatically adjusted so that the temperature of a heating plate can be ensured. Through automatic temperature control of the circulation medium, automatic adjusting of the temperature of the heating plate can be achieved, and the temperature of the base table can be controlled accurately.

Description

technical field [0001] The invention relates to a temperature-controllable base platform of semiconductor coating equipment, which contains a medium heat exchange chamber for the base platform, so as to realize rapid, accurate and uniform control of the temperature of the base platform. The invention belongs to the technical field of semiconductor thin film deposition application and manufacture. Background technique [0002] Semiconductor equipment often needs to heat the wafer and the chamber or maintain the temperature required for the deposition reaction during the deposition reaction, so the heating plate must have a heating structure to meet the purpose of preheating the wafer. Most of the semiconductor thin film deposition equipment will also have plasma to participate in the deposition reaction during the deposition process. Due to the release of plasma energy and the energy release of the reaction between chemical gases, the temperature of the heating plate and wafe...

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is to provide a temperature-controllable base platform for semiconductor coating equipment, which solves the problem that the temperature of the base platform rises too fast and cools down slowly during the process, resulting in low heat exchange efficiency and production capacity of the existing semiconductor coating equipment, and the wafer temperature The problem of not being uniform enough to cause the film to fail

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