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Method for producing layer structure and method for patterning

A technology for generating layers and patterns, which is applied in the photoengraving process of the pattern surface, photosensitive materials and instruments for opto-mechanical equipment, etc., and can solve the problem of difficulty in providing clear and fine patterns.

Active Publication Date: 2020-08-04
SAMSUNG SDI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Today, depending on the small size of the pattern to be formed, it is difficult to provide fine patterns with clear outlines only by the above-mentioned typical photolithography techniques

Method used

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  • Method for producing layer structure and method for patterning
  • Method for producing layer structure and method for patterning
  • Method for producing layer structure and method for patterning

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0175] 16 grams of phenanthrene-9-ol, 16 grams of 1,3-bis(2-methoxyethyl)benzene (1,3-bis(2-methoxyethyl)benzene), 0.46 grams of diethyl sulfate and 61 grams of propylene glycol Propylene glycol monomethyl ether acetate (PGMEA) was put into the flask and then stirred at 100° C. for 2 hours to 15 hours to perform polymerization reaction. The reaction is complete when the weight average molecular weight of the polymer is 2,000 to 3,500. When the polymerization reaction was completed, the reactant was slowly cooled to room temperature and then added to 40 g of distilled water and 400 g of methanol, and the mixture was stirred and allowed to stand. After removing the supernatant therefrom, the precipitate therein was dissolved in 80 g of propylene glycol monomethyl ether acetate (PGMEA), and the solution was stirred by using 320 g of methanol and 320 g of water and allowed to stand (primary process) . Herein, after removing the supernatant obtained therefrom again, the precipita...

Synthetic example 2

[0179] According to the same synthesis as Synthetic Example 1, by using 18 grams of anthracene, 26 grams of 1,4-bis(methoxymethyl)benzene (1,4-bis(methoxymethyl)benzene), 66 grams of propylene glycol monomethyl ether acetic acid Ester (PGMEA) and 0.5 g of diethyl sulfate obtained a polymer (Mw: 3500) including the structural unit represented by Chemical Formula 2a.

[0180] [chemical formula 2a]

[0181]

Synthetic example 3

[0183] According to the same synthesis as in Synthesis Example 1, by using 38 grams of 4,4'-(9H-fluorene-9,9-diyl)diphenol (4,4'-(9H-fluorene-9,9-diyl)diphenol ), 17 grams of 1,4-bis(methoxymethyl)benzene, 82 grams of propylene glycol monomethyl ether acetate (PGMEA) and 0.5 grams of diethyl sulfate to obtain a polymer comprising a structural unit represented by Chemical Formula 3a ( Mw: 3500).

[0184] [chemical formula 3a]

[0185]

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Abstract

The present invention provides a method of producing a layer structure and forming a pattern. The method for producing a layer structure includes coating a first composition on a substrate having a plurality of patterns and curing it to form a first organic layer (S1); applying a liquid material to the first organic layer to remove the first organic layer. a part of the layer (S2); and coating a second composition on the partially removed first organic layer and curing it to form a second organic layer (S3), wherein the first composition and the second composition are independently A polymer comprising a structural unit represented by Chemical Formula 1 and a solvent. The present invention can exhibit excellent planarization characteristics without using specific etch-back or chemical-mechanical polishing processes, and by using a predetermined polymer as a layer material, a resulting layer structure exhibiting improved etch resistance. In Chemical Formula 1, A1, B1, and * are the same as defined in the detailed description.

Description

[0001] Cross References to Related Applications [0002] This application claims priority and benefit from Korean Patent Application No. 10-2015-0148200 filed with the Korean Intellectual Property Office on October 23, 2015, the entire contents of which are incorporated herein by reference. technical field [0003] A method of producing a layer structure and a method of forming a pattern are disclosed. Specifically, a method of producing a layered structure for forming a multi-patterned structure such as a dual damascene interconnect structure, and a method of forming a pattern using the same are disclosed. Background technique [0004] Recently, the semiconductor industry has advanced to ultra-fine technology with patterns in the size of several nanometers to tens of nanometers. The ultra-fine technology mainly requires efficient photolithography. [0005] Typical photolithography techniques include: providing a material layer on a semiconductor substrate; coating a photo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/09G03F7/11G03F7/004
CPCG03F7/004G03F7/09G03F7/11G03F7/091
Inventor 郑瑟基金旼秀金瑆焕宋炫知姜善惠金永珉金有那金眞亨南沇希白载烈尹星莉李忠宪洪承希黄善民
Owner SAMSUNG SDI CO LTD