Thin film transistor and its manufacturing method

The technology of a thin film transistor and its manufacturing method, which is applied in the field of thin film transistors and its manufacturing, can solve the problems of unfavorable development of thin display and increase of overall thickness, and achieve the effect of favorable development of thin film and reduction of overall thickness

Active Publication Date: 2019-10-25
HONG FU JIN PRECISION IND (SHENZHEN) CO LTD +1
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for the thin film transistor with this structure, when the channel layer needs to meet a certain thickness, the additional ohmic contact layer will increase the overall thickness of the thin film transistor, which is not conducive to the development of thin displays.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film transistor and its manufacturing method
  • Thin film transistor and its manufacturing method
  • Thin film transistor and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] The embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0020] See figure 1 , The cross-sectional view of the structure of the thin film transistor 100 provided by the present invention. The thin film transistor 100 is formed on a substrate 200. The thin film transistor 100 includes a gate 110, a gate insulating layer 120, a semiconductor layer 160 made of intrinsic amorphous silicon material, a source 151 and a drain 152. The gate 110 is located on the substrate 200, the gate insulating layer 120 covers the substrate 200 and the gate 110, and the semiconductor 160 is disposed on a side of the gate insulating layer 120 away from the substrate 200 and located on the gate insulating layer 120. The position corresponding to pole 110. The gate insulating layer 120 is used to insulate the gate 110 from the semiconductor layer 160, the source 151 and the drain 152. The semiconductor layer 160 further i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A thin film transistor comprises a gate, a gate insulation layer, an intrinsic amorphous silicon layer, a source, and a drain. The gate insulation layer is arranged between the gate and the intrinsic amorphous silicon layer to insulate the gate and the intrinsic amorphous silicon layer from each other. The intrinsic amorphous silicon layer includes a first layer and a second layer covering the first layer. The second layer includes a non-doped region and a doped region at the two sides of the non-doped region. Both the source and the drain are in contact with the doped region. The non-doped region and at least part of the doped region are exposed between the source and the drain.

Description

Technical field [0001] The invention relates to a thin film transistor and a manufacturing method thereof. Background technique [0002] Thin film transistors are used in displays, usually as switches for charging or discharging storage capacitors. A common thin film transistor includes a gate, a gate insulating layer, a channel layer, an ohmic contact layer, a source and a drain. The gate is used to open or close the electron channel in the channel layer. The gate insulating layer covers the gate to insulate the gate and the channel layer from each other, and the ohmic contact layer is arranged on the channel layer. The source and drain are respectively arranged at both ends of the ohmic contact layer, and the ohmic contact layer between the source and the drain will be etched away to reveal the channel layer. Among them, the channel layer between the source and drain serves as a back channel, and needs to meet a certain thickness to provide better use characteristics. Howev...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L29/06H01L29/66
CPCH01L29/0684H01L29/66765H01L29/78669
Inventor 安生健二
Owner HONG FU JIN PRECISION IND (SHENZHEN) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap