Preparation method of Cu2O/CuO/WO3 composite heterojunction thin film

A composite heterojunction and thin film technology, applied in chemical instruments and methods, water/sludge/sewage treatment, metal/metal oxide/metal hydroxide catalysts, etc., can solve the problem of less research on ternary heterojunction thin films , poor reproducibility and uniformity, low cost, etc., to achieve the effect of being conducive to photo-generated charge transfer, improving photocatalytic activity, and simple film-forming equipment

Inactive Publication Date: 2017-05-17
JIANGSU JIANZHONG NEW MATERIAL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] From a technical point of view, the preparation of WO with unique morphology on the substrate 3 The thin film method often requires harsh preparation conditions (such as high temperature and high pressure hydrothermal conditions) to obtain a specific shape, and the reproducibility and uniformity are poor, which is not suitable for large-scale production in the industry; on the substrate Preparation of noble metal-modified WO 3 Although the photocatalytic activity of the thin film method has been greatly improved, the main problem is that the use of noble metals is very expensive, which limits its practical application value; the construction of WO 3 This method is the most likely to achieve large-scale production because of its relatively low cost and greatly improved photocatalytic activity. However, most of the current research focuses on the construction of binary WO 3 Based heterojunction films, such as TiO 2 / WO 3 Composite film, WO 3 / BiVO 4 Heterojunction Thin Film, WO 3 / Cu 2 O composite thin films, there are still relatively few studies on ternary heterojunction thin films

Method used

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  • Preparation method of Cu2O/CuO/WO3 composite heterojunction thin film
  • Preparation method of Cu2O/CuO/WO3 composite heterojunction thin film
  • Preparation method of Cu2O/CuO/WO3 composite heterojunction thin film

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Embodiment 1

[0029] a Cu 2 O / CuO / WO 3 A method for preparing a composite heterojunction thin film, comprising the following steps:

[0030] Step 1, prepare precursor sol

[0031] Weigh 2g of PVP with a molecular weight of 13000, and then measure 10ml of distilled water, then place the weighed PVP in a beaker filled with distilled water, place it on a constant temperature magnetic stirrer and continue stirring until the PVP is completely dissolved; then, add 0.5g The ammonium metatungstate was stirred again until the ammonium metatungstate was completely dissolved; then, 0.02 g of copper acetylacetonate was added, and the stirring was continued to completely dissolve it to obtain a precursor sol;

[0032] Step 2, spin coating

[0033] The prepared precursor sol was spin-coated on a 5cm*5cm ITO conductive glass through a homogenizer, and the set parameters were: speed 1 was 900r / min, time 1 was 8s, speed 2 was 2800r / min, time 2 was 50s, the number of spin coats is 2 layers, and then drie...

Embodiment 2

[0037] a Cu 2 O / CuO / WO 3 A method for preparing a composite heterojunction thin film, comprising the following steps:

[0038] Step 1, prepare precursor sol

[0039] Weigh 30g of PVP with a molecular weight of 40000, and then measure 100ml of distilled water, then place the weighed PVP in a beaker filled with distilled water, place it on a constant temperature magnetic stirrer and continue stirring until the PVP is completely dissolved; then, add 5g of PVP Ammonium metatungstate was stirred again until the ammonium metatungstate was completely dissolved; then, 0.2 g of copper acetylacetonate was added and stirred continuously to completely dissolve to obtain a precursor sol.

[0040] Step 2, spin coating

[0041] Spin-coat the prepared precursor sol on a 5cm*5cm ITO conductive glass through a homogenizer, and set the parameters as follows: speed 1 is 1200r / min, time 1 is 12s, speed 2 is 3200r / min, time 2 is 70s, the number of spin coats is 5 layers, and then dried at 120°C...

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Abstract

The invention discloses a preparation method of a Cu2O / CuO / WO3 composite heterojunction film. The preparation method comprises the following steps: preparing a precursor sol: weighing polyvinylpyrrolidone (PVP), adding distilled water, performing magnetic stirring, dissolving to obtain a PVP sol, then adding 0.5-5 g of ammonium metatungstate, stirring till the ammonium metatungstate is completely dissolved, adding 0.02-0.2 g of copper acetylacetonate and continuously stirring till complete dissolution to obtain the precursor sol; spin-coating the precursor sol on a substrate, drying in a drying box to obtain an initial film; finally calcining the initial film in an air atmosphere to obtain the Cu2O / CuO / WO3 ternary complex heterojunction thin film. Film-forming equipment required for the method disclosed by the invention is simple, required raw materials are low in cost, and the obtained thin film is level in surface, uniform in distribution and high in photo-catalytic activity.

Description

technical field [0001] The present invention relates to the preparation method of thin-film photocatalyst, be specifically related to a kind of Cu 2 O / CuO / WO 3 Preparation method of composite heterojunction film. Background technique [0002] At present, the problem of environmental pollution has seriously affected the physical and mental health of human beings, and it has also restricted economic development. Photocatalytic technology is considered to be a promising method to deal with environmental pollution. Therefore, a lot of research has been done on the synthesis and preparation of photocatalysts, and many new photocatalytic materials have been developed. Among many photocatalytic materials, tungsten trioxide (referred to as WO 3 ) has received widespread attention, first of all because WO 3 The bandgap width is about 2.5eV, and it can absorb visible light with a wavelength less than 500nm, so it can be used as a visible photocatalytic material; secondly, WO 3 ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/888C02F1/30
CPCB01J23/888B01J35/004B01J35/065C02F1/30C02F2305/10
Inventor 董鹏玉关荣锋奚新国田浩胡家伟侯贵华
Owner JIANGSU JIANZHONG NEW MATERIAL TECH
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