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A kind of sulfuration-assisted electrodeposition preparation method of pure phase in2s3 semiconductor thin film

A semiconductor and auxiliary electrode technology, which is applied in the field of sulfuration-assisted electrodeposition preparation of pure-phase In2S3 semiconductor thin films, can solve the problems of large environmental pollution, impurity in the film, and difficulty in controlling the quality of the film, and achieve environmental friendliness, dense and continuous thin film, The effect of simple operation process

Active Publication Date: 2019-03-01
BEIJING UNIV OF CHEM TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Although it has been reported that In 2 S 3 Electrodeposition preparation method and vulcanization method of semiconductor thin film, but there are the following disadvantages: 1) The quality of the film prepared by electrodeposition method is difficult to control, and there are impurity phases in the film; 2) Toxic H 2 S gas is used as a sulfur reactant, which has great pollution to the environment

Method used

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  • A kind of sulfuration-assisted electrodeposition preparation method of pure phase in2s3 semiconductor thin film
  • A kind of sulfuration-assisted electrodeposition preparation method of pure phase in2s3 semiconductor thin film
  • A kind of sulfuration-assisted electrodeposition preparation method of pure phase in2s3 semiconductor thin film

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Embodiment 1

[0027] 1) Sequentially weigh 0.604 g LiCl·H 2 O, 0.221 g InCl 3 , 0.063 g Na 2 SO 3 and 0.993 gNa 2 S 2 o 3 ·5H 2 O (Reagents used except InCl 3 Purity is 99.995%, the rest are analytical pure) was dissolved in 100 mL of water, stirred evenly for 5 min to obtain a clear electroplating solution, the pH value was adjusted to 3 with 1.6 mol / L dilute hydrochloric acid.

[0028] 2) Use the solution prepared in step 1) as the electrolyte, the pretreated ITO glass as the working electrode, the platinum sheet as the counter electrode, and the saturated calomel electrode as the reference electrode to form a three-electrode system to ensure that the working electrode and The distance between the platinum sheets is 3.5 cm, the temperature of the electroplating solution is controlled at 25 °C±1 °C by the temperature control device, the deposition potential is controlled at -1.15 V (relative to the saturated calomel electrode), and the electrodeposition is performed for 20 min with ...

Embodiment 2

[0032] 1) Sequentially weigh 0.604 g LiCl·H 2 O, 0.221 g InCl 3 , 0.063 g Na 2 SO 3 and 0.993 gNa 2 S 2 o 3 ·5H 2 O (Reagents used except InCl 3 Purity is 99.995%, the rest are analytical pure) was dissolved in 100 mL of water, stirred evenly for 5 min to obtain a clear electroplating solution, the pH value was adjusted to 3 with 1.6 mol / L dilute hydrochloric acid.

[0033] 2) Use the solution prepared in step 1) as the electrolyte, the pretreated ITO glass as the working electrode, the platinum sheet as the counter electrode, and the saturated calomel electrode as the reference electrode to form a three-electrode system to ensure that the working electrode and The distance between the platinum sheets is 3.5 cm, the temperature of the electroplating solution is controlled at 25 °C±1 °C with a temperature control device, the deposition potential is controlled at -1.15 V (relative to the saturated calomel electrode), and the electrodeposition is performed for 20 min with ...

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Abstract

The invention relates to a vulcanization assisting electro-deposition preparation method of a pure-phase In2S3 semiconductor film. An electrolyte comprises, by mole ratio, 100 parts of lithium chloride, 2.5-10 parts of indium chloride, 1-10 parts of sodium sulfite and 40-100 parts of sodium thiosulfate. The pH value of the electrolyte is 2.5-3.75. After the electrolyte is stirred, a pre-deposition film which is good in adhesive force is prepared on an indium tin oxide (ITO) glass substrate through the electro-deposition method, then the pre-deposition film is treated at the constant temperature of 200-600 DEG C under the powdered sulfur and inert atmosphere protection conditions, and the pure-phase In2S3 semiconductor film high in crystallinity is obtained. According to the method provided by the invention, the pure-phase In2S3 semiconductor film is prepared on the ITO glass substrate, and the pure-phase In2S3 semiconductor film is suitable for serving as a buffer layer material of a film solar battery.

Description

technical field [0001] The invention belongs to the field of photoelectric materials, in particular to pure phase In which can be used as a buffer layer material for thin-film solar cells 2 S 3 Sulfur-assisted electrodeposition preparation method of semiconductor thin film. Background technique [0002] Exploring environmentally friendly metal sulfide semiconductor materials and using them as solar cell buffer layers is crucial for the large-scale production of thin-film solar cells. So far, cadmium sulfide (CdS), as a traditional buffer layer material, has been effectively used in copper indium gallium selenide / sulfide solar cells with high photoelectric conversion efficiency. Due to the strong toxicity of Cd element, it will cause harm to the ecological environment, which greatly limits the large-scale production of Cd-containing solar cells. Indium trisulfide (In 2 S 3 ) is a very important direct bandgap inorganic semiconductor, because of its environmental friendli...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D3/54C25D5/50
CPCC25D3/54C25D5/50
Inventor 王峰刘萌李志林窦美玲刘景军吉静宋夜
Owner BEIJING UNIV OF CHEM TECH