Manufacturing method of nickel-chromium target assembly

Abstract

The invention provides a method for manufacturing a nickel-chromium target material component. The method comprises the following steps: placing a solder on welding faces of both a back panel and a nickel-chromium target material; heating to enable the solder to be molten; performing first ultrasonic treatment on the welding faces of both the back panel and the nickel-chromium target material, and soaking the welding faces; re-placing the solder on the welding face of the back panel, and performing second ultrasonic treatment on the welding faces of both the back panel and the nickel-chromium target material; laminating the welding faces of the back panel and the nickel-chromium target material and welding; and cooling after welding to form the target material component. According to the method, welding is assisted by twice ultrasonic treatment methods, twice ultrasonic treatment can enable alloy layers to form on the surfaces of the back panel and the nickel-chromium target material and can also ensure that the solder is uniformly distributed on the welding faces of both the back panel and the nickel-chromium target material, and accordingly, the high-welding-strength, high-welded-rate and low-defect-rate welding effects of the nickel-chromium target material and the back panel are achieved.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor sputtering targets, in particular to a method for manufacturing a nickel-chromium target assembly. Background technique [0002] The target is the basic material of sputtering technology. Since the atomic surface energies of nickel and chromium are relatively close, there is no significant deviation between the sputtering product composition of the nickel-chromium target and the target composition, which is conducive to the selection of the target composition and the control of the film composition, and the nickel-chromium alloy film also has a relatively high Due to the advantages of low temperature coefficient of resistance, high sensitivity coefficient and small dependence on temperature, the application of nickel-chromium targets in the market has attracted more and more attention. [0003] In order to ensure that the nickel-chromium target has good electrical and thermal conductivi...

AI Technical Summary

Problems solved by technology

In addition, under the existing sputtering technology, the working environment of the target assembly is very harsh. During the sputtering process, the target side of the target assembly is usually under high temperature and high pressure, while the back plate side is under a certain pressure. In cold water, this puts high demands on the welding process of the target and back plate

[0004] However, in the existing welding process of nickel-chromium target and back plate, the welding rate of target components is low and the defect rate is high

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