Intake components and reaction chamber

Abstract

The invention provides an air inlet assembly and a reaction cavity. The air inlet assembly is arranged on the top inside the reaction cavity and comprises an air inlet plate and a plurality of air inlet parts distributed in the air inlet plate at intervals, the air inlet parts are made of insulation materials, and are detachably connected with the air inlet plate, and air inlets are formed in the air inlet parts and are used for conveying of process gas to the reaction cavity. According to the air inlet assembly, process uniformity and process stability can be improved, and the use cost of equipment can be reduced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an air intake component and a reaction chamber. Background technique [0002] Plasma enhanced chemical vapor deposition (Plasma enhanced chemical vapor deposition, referred to as PECVD) is one of the important means of preparing thin films using plasma technology. With the help of plasma ionization process gas, active substances such as free radicals and ions generated by the process gas produce chemical reactions on the surface of the substrate to obtain a thin film. Flat plate PECVD equipment has become one of the commonly used equipment in semiconductor and other industries due to its advantages of large substrate bearing area and good film growth uniformity. [0003] figure 1 It is a cross-sectional view of an existing flat-plate PECVD equipment. see figure 1 , the PECVD equipment mainly includes a reaction chamber 1, an upper electrode and a lower electrode. W...

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Problems solved by technology

[0004] Because the above-mentioned air inlet plate 5 is made of metal material, and the diameter of each small hole is small and the depth is high, that is, the inner space of each small hole is narrow and long, which not only makes the air pressure inside the small hole obviously higher than the air pressure in the reaction chamber, resulting in The local plasma density at the small hole is higher than other positions, and each small hole will also affect the uniformity of the electric field in the reaction chamber 1, that is, on the gas inlet plate 5, the electric field in the area where each small hole is located The intensity is generally higher than that of the non-small hole area, resulting in the density and energy of the ion bombardment of each small hole being higher than that of the non-small hole area on the gas inlet plate. The higher ion bombardment density and energy cause the small hole to produce physical etching or discharge (arcing) phenomenon, which not only brings problems such as the generation of particles, the uniformity and stability of the coating film, and the damage of local small holes requires the replacement of the entire electrode plate 4, thereby increasing the cost of use.

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