37results about How to "Reduce discharge phenomenon" patented technology

The invention discloses a battery discharge control method and device, which relates to the control field. The method comprises the following steps of: obtaining a current status parameter of a battery, and obtaining a current status parameter of a motor; determining maximal discharge power currently allowed by the battery according to the current status parameter of the battery and the current status parameter of the motor; and receiving a discharge request, and controlling the battery to discharge according to the power of the discharge request and the maximal discharge power currently allowed by the battery. The battery discharge method and device provided by the invention control the battery to discharge according to the power of the discharge request and the maximal discharge power currently allowed by the battery so as to reduce battery overdischarge phenomenon and enhance battery performance.

Disclosed is an epoxy resin cast dry type transformer, which comprises a low-voltage winding, two high-voltage windings, an iron core, an upper heel piece, a lower heel piece, an upper clamp, and a lower clamp. The low-voltage winding is arranged at the inner layer of the loop and the high-voltage windings are arranged at the outer layer of the loop. The low-voltage winding is made of clutch gold and is provided with an insulating interlayer which is presoaked with DMD resin. The initial loops of the high-voltage windings are located at one end of the whole loop, and the starting end of the first coil of each layer of the high-voltage windings is connected with the finishing end of the last coil of the next layer. The number of the coils of the windings descends from the inner layer to the outer layer, making the windings developing into antiparallelogram structures; a soft gridding cloth layer is arranged between each two adjacent layers; the whole medium is epoxy resin and solvent-free gridding material is arranged between the outer layers of the windings at both ends of the whole loop. The epoxy resin cast dry type transformer is reasonable in design, novel in design, large in power, and small in size, and is convenient to install and easy to maintain. The epoxy resin cast dry type transformer is safe, stable and reliable and is long in service life and low in using cost and requires no daily maintenance. The epoxy resin cast dry type transformer is of strong practicability and is applicable in power supplying departments and power consuming departments.

The invention provides a built-in transformer of a wind power tower barrel, comprising a low-voltage winding, a high-voltage winding and an iron core. The structural key points are as follows: the iron core is provided with an upper iron yoke and a lower iron yoke; a side column is respectively arranged between the left end and the right end of the upper iron yoke and the lower iron yoke; the upper and lower ends of the side column are respectively connected with the left end and the right end of the iron yoke in an overlapping manner; the middle part of the iron yoke is provided with a middle column; the upper end and the lower end of the middle column are respectively connected with the middle part of the iron yoke in an overlapping manner; the side column and the middle column are respectively provided with the winding; the inner layer of the winding is provided with low-voltage coil; the outer layer of the low-voltage coil is sheathed with a high-voltage coil; clamping units are respectively arranged at the front and rear sides of the iron yoke; the low-voltage coil is wound with a copper foil; the materials pre-impregnated by DMD resin is used as the insulation between layers; a flexible grid cloth is arranged between two adjacent layers of the high-voltage winding; and the periphery of the high-voltage is provided with the solventless grid materials. The invention is characterized by compact structure, long service life, low noise, free maintenance, high reliability, no pollution, flame retardancy and the like, the probability of partial discharge is approximately zero, and the invention can be recycled after the service life is ended up.

A terminal device includes a housing, a communication antenna installed in a first region in the housing and configured to transmit and receive electromagnetic waves, an agglomerative meta-structure installed in a second region spaced from the first region in the housing and configured to agglomerate the electromagnetic waves received from the communication antenna, and a recycling unit configured to convert the electromagnetic waves agglomerated by the agglomerative meta-structure to effective power.

A thin film transistor (TFT) array substrate for reducing electrostatic discharge damage includes a substrate, a plurality of pixel units, scan lines and data lines. The substrate has a pixel area and a peripheral area adjacent to the pixel area. The pixel units are disposed in the pixel area. The scan lines and data lines are disposed in the pixel area of the substrate and electrically connected with the pixel units, wherein one end of each scan line extending to the peripheral area is a bonding pad for the scan line. One end of each data line extending to the peripheral area is a bonding pad for the data line. The other end of each data line extending to the peripheral area is an end part of the data line. Particularly, the end part of the data line does not exceed the outmost scan line.

The invention discloses a device for preparing a graphene crystal film through electron beam scanning. The device comprises a vacuum chamber and an electron gun arranged at the top of the vacuum chamber, a workbench is arranged in the vacuum chamber, an insulating plate is arranged on the workbench, a metal substrate is arranged on the insulating plate, and a carbon polymer film is arranged on themetal substrate; a carbon powder adsorption cover is adopted to cover an area from the outer side of the carbon polymer film to an electron beam output port in the top of the inner side of the vacuumchamber, the carbon powder adsorption cover comprises an inner layer and an outer layer, a plurality of insulating ceramic blocks are arranged between the inner layer and the outer layer, the inner layer is grounded, and the outer layer is electrically connected with a first direct-current power supply, so that a first adsorption electrostatic field is formed between the inner layer and the outerlayer; wherein the first adsorption electrostatic field is used for adsorbing carbon powder generated in the process of preparing the graphene crystal film through electron beam scanning. Carbon powder generated in the machining process can be adsorbed to the maximum extent through the carbon powder adsorption cover, pollution of the carbon powder generated in the machining process to an electronic gun and a vacuum chamber is effectively prevented, and the service life of equipment is prolonged.

The invention provides a compression ring assembly and a semiconductor process chamber, a compression ring is used in cooperation with a chuck, the compression ring fixes a tray to the chuck through alifting device, a compression ring assembly comprises an electrostatic assembly and an insulated compression ring body, the compression ring body is used for making contact with a tray, and through holes are formed in the compression ring body. The through holes are used for exposing wafers carried on the tray; the electrostatic assembly is connected with the compression ring body and used for enabling the compression ring body to generate electrostatic adsorption force so as to adsorb the tray through the compression ring body, and the electrostatic assembly is further used for eliminating the electrostatic adsorption force of the compression ring body so as to release the tray. According to the compression ring assembly and the semiconductor process chamber provided by the invention, the probability of damage to the tray can be reduced, the probability of occurrence of a discharge phenomenon can be reduced, the probability of damage to a lower electrode structure can be reduced, thedesign difficulty of the lower electrode structure can be reduced, and the sealing performance of a reaction chamber can be improved.

The invention provides a preparation method of a semiconductor device. The method comprises the steps of providing a substrate, and forming a photodiode region and a floating diffusion region in the substrate; forming a patterned mask layer on the substrate; and taking the patterned mask layer as a mask to etch partial depth of the substrate, so as to form a gate trench located between the photodiode region and the floating diffusion region in the substrate, at least partial depth of the gate trench being formed by a cyclic etching process. The circular etching process comprises a first etching process and a second etching process which are circularly carried out, the first etching process is used for etching the substrate, the second etching process is used for etching a polymer formed in the first etching process, and the side wall of the part, formed by adopting the circular etching process, of the gate trench is vertical. According to the invention, the generation of white pixels is reduced, and the electrical performance of the device is improved.

The invention relates to an embedded word line structure and a preparation method thereof, and the preparation method comprises the steps: forming a first groove in a semiconductor substrate, and enabling the bottom of the first groove to be provided with a tip; carrying out epitaxial growth in the first groove, and reducing the depth of the tip of the bottom of the first groove; and forming a gate dielectric layer on the inner wall of the first groove and filling a gate conductive layer in the first groove to form an embedded word line structure. According to the preparation method, the tip depth of the first groove is reduced through the epitaxial growth process, so that the tip discharge phenomenon is weakened, and the device performance is improved.

The invention provides application of a double-conductive aluminum foil adhesive tape, and particularly relates to application of the double-conductive aluminum foil adhesive tape in preparation of afilamentous fungus scanning electron microscope sample. The preparation method of the filamentous fungus scanning electron microscope sample comprises the steps of 1 preparing a solid culture medium;2 preparing the double-conductive aluminum foil adhesive tape; 3 carrying out inoculating and inserting; 4 enabling the double-conductive aluminum foil adhesive tape to climb on a sample table; and 5observing the scanning electron microscope. The double-conductive aluminum foil adhesive tape has excellent conductivity, one surface of the double-conductive aluminum foil adhesive tape is provided with colloidal substances, aspergillus oryzae hyphae growing on the colloidal surface can be firmly attached to the surface of the double-conductive aluminum foil adhesive tape, the hyphae are tightlyattached to the double-conductive aluminum foil adhesive tape, and the positions and shapes of the hyphae, sporangium and spores on a carrier sheet cannot be changed, so that a better electron microscope scanning in-situ observation effect is achieved.

The invention relates to a brazing method for a joint-free rotary target. The method particularly comprises the steps that brazing materials are subjected to high frequency oscillation to enter the inner surface of a target pipe and the outer surface of a back pipe through an ultrasonic welding head; the target pipe and the back pipe are mounted on a positioning base, and then a brazing filler metal disc is connected to the upper end of the target pipe; an assembled brazing device is placed in an electric heating constant-temperature blasting drying oven, a temperature control heating curve isset through a temperature controller, and after the heat preservation time is reached, the brazing device is naturally cooled to room temperature; and the whole set of device is cooled to room temperature, residual brazing materials on the brazing filler metal disc are removed through a scraper, the brazing filler metal disc and the positioning base are demounted, and the brazed rotary target isobtained. According to the brazing method, the problem that in the target brazing process, the temperature difference in the target pipe and back pipe heating process is large can be solved; and according to the brazing method, the heating rate can be controlled easily, and the problem of cracking due to too fast temperature rise of the target can be avoided.