Encapsulating structure for high-power semiconductor laser and preparation method for high-power semiconductor laser

Abstract

The invention provides an encapsulating structure for a high-power semiconductor laser. The encapsulating structure comprises a refrigerator and a semiconductor laser element, wherein the semiconductor laser element consists of a laser chip and a substrate which is bonded to the laser chip and plays roles in conducting current and dissipating heat; the substrate is of an integrated multilayer composite substrate with a plurality of coefficients of thermal expansion and is bonded to the refrigerator through a solder, and the coefficient of thermal expansion of each layer of the substrate increases from the laser chip end to the refrigerator end. The invention further provides a preparation method for the high-power semiconductor laser. Based on the encapsulating structure for the high-power semiconductor laser and the preparation method for the high-power semiconductor laser, the thermal stress of a P face of the laser chip can be effectively balanced, and the near-field nonlinear effect of the laser is lowered greatly.

Description

Technical field [0001] The invention relates to the field of semiconductor lasers, in particular to a high-power semiconductor laser packaging structure and a preparation method thereof. Background technique [0002] figure 1 Schematic diagram of the existing semiconductor laser package structure, such as figure 1 As shown, since the coefficient of thermal expansion (CTE) of the laser chip (bar) 1 and the heat sink 5 (cooler) do not match, it is necessary to use the substrate 3 as a transitional heat sink to balance the laser chip 1 and The thermal expansion coefficients between the heat sinks 5 do not match, but even so, the P surface where the laser chip 1 is bonded to the substrate 3 will still be stressed by the shrinkage of the heat sink 5, which will cause the laser chip (bar) to move upwards Bend (like figure 2 As shown), this not only reduces the quality of the laser beam, but also seriously affects the subsequent collimation and coupling efficiency. Summary of the inve...

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Problems solved by technology

[0002] figure 1 It is a schematic diagram of the existing semiconductor laser package structure, such as figure 1 As shown, since the coefficient of thermal expansion (CTE, Coefficient of thermal expansion) of the laser chip (bar) 1 and the heat sink 5 (cooler) does not match, it is necessary to use the substrate 3 as a transitional heat sink to balance the laser chip 1 and The thermal expansion coefficients between the heat sinks 5 do not match, but even so, the P surface where the laser chip 1 and the substrate 3 are bonded will still be subject to stress due to the shrinkage of the heat sink 5, and this stress will cause the laser chip (bar) to go upward. bending (such as figure 2 shown), which not only reduces the quality of the laser beam, but also seriously affects the efficiency of subsequent collimation and coupling

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