A method of growing large and square sapphire single crystals

A sapphire, large-scale technology, applied in chemical instruments and methods, single crystal growth, crystal growth, etc., can solve the problems of broken crystal integrity, low crystal quality, and inability to ensure the uniformity and stability of the growth interface, Achieve the effect of ensuring stability and uniformity, improving utilization, improving crystal quality and yield

Inactive Publication Date: 2016-02-17
HEBEI UNIV OF TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a method for growing large-sized and square sapphire single crystals, using a special crucible with an outer circle and inner square shape and an upper diameter larger than the bottom diameter, and adopting the process of directional crystallization from the upper part to grow crystals with Cuboid or cube-shaped sapphire crystals with a specific crystal plane orientation overcome the traditional growth method that cannot guarantee the uniformity and stability of the growth interface, resulting in low crystal quality. Many defects of fragmentation and poor crystal integrity due to greater thermal stress

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  • A method of growing large and square sapphire single crystals
  • A method of growing large and square sapphire single crystals
  • A method of growing large and square sapphire single crystals

Examples

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Effect test

Embodiment 1

[0047] A. Crystal growth furnaces for growing large and square sapphire single crystals

[0048] Such as figure 1 The illustrated embodiment constitutes a crystal growth furnace for growing large-sized and square sapphire single crystals used in this embodiment, wherein the outer surface 20 of the crucible of the special crucible 9 is cylindrical and has a height of 180mm, and the upper opening 16 of the outer surface is The outer circle diameter that shape is circular is 140mm, and the side length of the inclined waist of the trapezoidal cone of interior space is 165mm, and the shape of the upper mouth 25 of trapezoidal cone of interior space is that the long side length of rectangle is 90mm and the wide side length 80mm, the shape of the bottom mouth 23 of the trapezoidal cone in the internal space is that the long side length of the rectangle is 80mm and the width of the wide side is 70mm, the shape of the upper mouth 25 of the trapezoidal cone in the internal space and the...

Embodiment 2

[0065] A. Crystal growth furnaces for growing large and square sapphire single crystals

[0066] Such as figure 1 The illustrated embodiment constitutes a crystal growth furnace for growing large-sized and square sapphire single crystals used in this embodiment, wherein the outer surface 20 of the crucible of the special crucible 9 is cylindrical and has a height of 350 mm, and the upper opening 16 of the outer surface is The outer circle diameter that shape is circular is 290mm, and the side length of the oblique waist of the trapezoidal cone of internal space is 300mm, and the shape of the upper mouth 25 of trapezoidal cone of internal space is that the long side length of rectangle is 210mm and the wide side length It is 190mm, and the shape of the bottom opening 23 of the trapezoidal cone in the internal space is that the long side length of the rectangle is 180mm and the width of the wide side is 160mm. The shape of 23 is also rectangular, the thickness of the bottom 21 ...

Embodiment 3

[0083] A. Crystal growth furnaces for growing large and square sapphire single crystals

[0084] Such as figure 1 The illustrated embodiment constitutes a crystal growth furnace for growing large-sized and square sapphire single crystals used in this embodiment, wherein the outer surface 20 of the crucible of the special purpose crucible 9 is cylindrical and has a height of 520mm, and the upper opening 16 of the outer surface is The outer circle diameter that shape is circular is 450mm, and the side length of the oblique waist of the trapezoidal cone of interior space is 490mm, and the shape of the upper mouth 25 of trapezoidal cone of interior space is that the long side length of rectangle is 300mm and the wide side length It is 280mm, the shape of the bottom opening 23 of the trapezoidal cone in the internal space is that the long side length of the rectangle is 250mm and the width of the wide side is 220mm, the shape of the upper mouth 25 of the trapezoidal cone in the int...

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Abstract

The invention discloses a method for growing a large-size square sapphire single crystal, relating to single crystal materials of aluminum oxides. According to the method, a special crucible is used and a process for upper seeding and directional crystallization is adopted to grow a rectangular or square sapphire crystal with specific crystal orientation, wherein the special crucible has a round outside and a square inside namely the outer surface is cylindrical and the inner space is in the shape of a trapezoidal cone, and the caliber of an upper port of the inner space trapezoidal cone is bigger than that of a bottom port of the inner space trapezoidal cone of the special crucible. The method disclosed by the invention overcomes the defects that the conventional growth method can not ensure the uniformity and stability of a growth interface to result in low crystal quality, and due to anisotropy of the growth rate, the crystal is broken by great thermal stress caused during growing and is low in integrity.

Description

technical field [0001] The technical solution of the present invention relates to the single crystal material of aluminum oxide, specifically a method for growing large-sized and square sapphire single crystals. Background technique [0002] Sapphire single crystal has excellent optical, mechanical, thermal, dielectric, radiation resistance and corrosion resistance properties. , military infrared optical windows and femtosecond laser matrix materials. With the rapid development of the semiconductor lighting market, higher requirements for large size, high quality and low cost are put forward for sapphire single crystal materials. In recent years, Apple has begun to widely use sapphire materials in the field of smartphones, including mobile phone camera mirrors, sapphire HOME button mirrors and sapphire mobile phone covers, which further broadens the application fields of sapphire and further opens up the market space. [0003] Traditional sapphire production methods, such ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/20C30B15/10C30B15/36
Inventor 陈洪建卢纪军刘维娜陈晨阎文博刘彩池王运满程鹏
Owner HEBEI UNIV OF TECH
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