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CMOS Analog Memory Using Ferroelectric Capacitors

A technology of ferroelectric capacitors and ferroelectric memory, which is applied in the direction of static memory, digital memory information, information storage, etc., and can solve the problem of memory life, limited number of unit erasing and rewriting, and increased cost.

Active Publication Date: 2020-11-17
RADIANT TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This "garbage collection" procedure further complicates memory and increases cost
Ultimately, there is a limit to the number of times a cell can be erased and rewritten, and therefore, memory longevity can be an issue in applications where large numbers of cells need to be erased and rewritten multiple times

Method used

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  • CMOS Analog Memory Using Ferroelectric Capacitors
  • CMOS Analog Memory Using Ferroelectric Capacitors
  • CMOS Analog Memory Using Ferroelectric Capacitors

Examples

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Embodiment Construction

[0042] The circuits discussed in this specification include two types of capacitors. The first type is a ferroelectric capacitor, which is a capacitor having a dielectric material as the dielectric in the capacitor. The second type is a conventional capacitor which has a non-ferroelectric material as its dielectric layer. In the following discussion, the term capacitor will be used for conventional capacitors, unless the context dictates otherwise.

[0043] The manner in which the present invention provides its advantages will be more readily understood by reference to the problems encountered with prior art ferroelectric capacitor memories attempting to store more than two states per ferroelectric capacitor. Ferroelectric capacitors are based on a model that maps data values ​​to specific polarization states of the ferroelectric dielectric by applying write voltages across the ferroelectric capacitor corresponding to each state. The polarization state of the dielectric is s...

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Abstract

A memory cell and a memory constructed from the memory cell are disclosed. A memory according to the invention comprises a ferroelectric capacitor, a charge source and a readout circuit. The charge source receives a data value to be stored in the ferroelectric capacitor. The charge source converts the data value into a residual charge to be stored in the ferroelectric capacitor and causes this residual charge to be stored in the ferroelectric capacitor. The read circuit determines the charge stored in the ferroelectric capacitor. The data values ​​have more than three different possible states and the determined charge has more than three determined values. The memory also includes a reset circuit that causes the ferroelectric capacitor to enter a predetermined known reference polarization state.

Description

Background technique [0001] Non-volatile solid-state EEPROM memory has become competitive with conventional spinning disk media for large-scale data storage in applications requiring high speed and / or low power consumption. This memory has a much shorter effective "seek" time and a data transfer rate as fast as or faster than a conventional disk drive. Furthermore, these memories can withstand significant mechanical shock and require a fraction of the power of conventional disk drives. However, the cost of such memory still limits the use of drives. Furthermore, such memory cannot be used in high radiation environments. [0002] One approach for reducing the cost of such memories is to utilize memory cells with more than two storage states. For example, in EEPROM memory, tunneling is used to deposit charge on a floating gate. The charge changes the conductivity of the associated transistor. In binary memory, the presence or absence of charge needs to be sensed. In a mult...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/22
CPCG11C11/221G11C11/2273G11C11/5657G11C11/2259G11C11/2253G11C11/2275
Inventor 小约瑟夫·T·埃文斯
Owner RADIANT TECH
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