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Polishing composition, method for manufacturing same, and polishing method

A manufacturing method and composition technology, which can be applied to polishing compositions containing abrasives, manufacturing tools, grinding devices, etc., and can solve the problems of insufficiently satisfying metals, interlayer insulating films, etc.

Inactive Publication Date: 2017-05-31
FUJIMI INCORPORATED
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these conventional polishing compositions do not fully satisfy the user's requirements regarding the polishing speed of metals and interlayer insulating films.

Method used

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  • Polishing composition, method for manufacturing same, and polishing method
  • Polishing composition, method for manufacturing same, and polishing method

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Embodiment Construction

[0023] Embodiments of the present invention will be described in detail. The polishing composition of the present embodiment contains colloidal silica having an organic acid immobilized on the surface, hydrogen peroxide, and a salt. And, the salt is at least one of ammonium nitrate and ammonium sulfate. The polishing composition can be produced by mixing colloidal silica having an organic acid immobilized on the surface, hydrogen peroxide, a salt of at least one of ammonium nitrate and ammonium sulfate, and a liquid medium such as water or an organic solvent. .

[0024] The polishing composition is suitable for polishing an object to be polished such as elemental silicon, silicon compound, metal, etc., for example, polishing the surface of a semiconductor wiring substrate containing elemental silicon, silicon compound, metal, etc. in the manufacturing process of a semiconductor device the use of. Furthermore, it is particularly suitable for the use of polishing tungsten (W)...

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Abstract

The invention discloses a polishing composition, a method for manufacturing the same, and a polishing method. Provided is a polishing composition whereby a polishing object such as simple silicon, a silicon compound, or a metal, particularly a polishing object including tungsten, can be polished at a high polishing speed. The polishing composition contains colloidal silica in which an organic acid is immobilized on the surface thereof, hydrogen peroxide, and a salt. The salt is ammonium nitrate and / or ammonium sulfate.

Description

technical field [0001] The present invention relates to a polishing composition, a method for producing the same, and a polishing method. Background technique [0002] In the manufacturing process of semiconductor devices, there is a process of polishing simple silicon (Si), silicon compounds, metals and other objects to be polished. For example, it is required to polish metals and interlayer insulating films at a high polishing rate. In order to polish metals and interlayer insulating films, conventionally used polishing compositions sometimes contain abrasive grains and oxidizing agents. For example, Patent Document 1 discloses a metal polishing composition containing abrasive grains, an oxidizing agent, a protective film forming agent, an acid, and water. In addition, Patent Document 2 discloses a metal polishing composition containing an oxidizing agent and colloidal silica in which at least a part of silicon atoms on the surface are substituted with aluminum atoms. Fu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14B24B37/00C09G1/02H01L21/304
CPCH01L21/31053C09K3/1436C09G1/02B24B37/044H01L21/3212C09K3/1409C09K3/1454H01L21/304H01L21/30625
Inventor 佐藤刚树坂部晃一
Owner FUJIMI INCORPORATED