A kind of abutment assembly for preparing diamond

A diamond and abutment technology, which is applied in the field of preparing diamond abutment components, can solve problems such as failure and influence of diamond growth, and achieve the effects of reducing generation, improving heat conduction path, and preventing entry

Active Publication Date: 2019-05-07
徐州景澜新材料科技有限公司
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a kind of abutment assembly for preparing diamond, aiming to solve the problem that the existing abutment assembly for preparing diamond provides conditions for the growth of graphite due to the huge temperature gradient between the substrate support and the water cooling platform. , leading to the problem that the growth of diamond is affected or even fails

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of abutment assembly for preparing diamond
  • A kind of abutment assembly for preparing diamond
  • A kind of abutment assembly for preparing diamond

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0014] In the process of preparing diamond, the principle of graphite production is: methane is used as a working gas. Under the condition of no corrosive plasma particles, methane begins to crack at about 600 ° C, and carbon and hydrogen in graphite phase will be produced. Complete cracking at about 1500°C, the chemical process is: CH 4 →C+2H 2 . It can be seen that the conditions for the accumulation of graphite are the presence of methane gas, the temperature is higher than 600 °C, and the presence of transition metals will further accelerate the formation of graphite.

[0015] In vie...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
melting pointaaaaaaaaaa
melting pointaaaaaaaaaa
radiusaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the technical field of diamond synthesis, and provides a pedestal assembly for preparing diamond. The pedestal assembly comprises a water cooling table and a substrate support arranged on the water cooling table. The water cooling table is tightly connected with the substrate support. Annular grooves are formed in the upper and lower surfaces of the portion, close to the outer edge, of the substrate support, and an upper thermal bridge and a lower thermal bridge are formed correspondingly. A heat conducting gasket is arranged between the water cooling table and the substrate support and located on the outer ring part of the portion, with the lower thermal bridge as the boundary, of the lower surface of the substrate support.

Description

technical field [0001] The invention belongs to the technical field of diamond synthesis, in particular to an abutment assembly for preparing diamond. Background technique [0002] There are many synthetic methods of chemical vapor deposition diamond, and the process of preparing diamond is mainly as follows: placing the diamond substrate on the substrate support, and then placing the substrate support above the water cooling table, and the diamond substrate is in contact with the plasma, so that the The heat of the plasma is transferred to the substrate holder through the diamond substrate, and the substrate holder then transfers the heat to the water cooling platform, so as to maintain thermal balance. In a stable temperature environment, diamond deposition is achieved. Usually, the temperature range of synthetic diamond is between 800-1400°C. When the microwave power is fixed, the higher the pressure, the greater the power density of the plasma, and vice versa. [0003]...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/458C23C16/27
CPCC23C16/27C23C16/4581
Inventor 唐永炳朱雨牛卉卉
Owner 徐州景澜新材料科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products