CVD (Chemical Vapor Deposition) thin film and etching treatment method thereof

Abstract

The invention provides a CVD (Chemical Vapor Deposition) thin film and an etching treatment method thereof. The etching treatment method comprises the steps of feeding an ignition medium in a CVD cavity, wherein the CVD thin film is placed in the CVD cavity; feeding an etching gas into the CVD cavity, and etching the CVD thin film through a plasma of the etching gas. According to the CVD thin film and the etching treatment method thereof, the etching gas is fed into the CVD cavity so as to etch the CVD thin film, so that the thin film is formed and etched through a CVD device, the circulation times of the product between different stations is reduced, and the production efficiency can be improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a CVD thin film and an etching treatment method thereof. Background technique [0002] Currently, PECVD (Plasma Enhanced Chemical Vapor Deposition, Plasma Enhanced Chemical Vapor Deposition) is an indispensable film forming process in the manufacturing process of display devices such as TFT (Thin film transistor, thin film transistor). In the industrial production process, it is necessary to detect the quality of the film formed by CVD, so as to find the quality problems of the product in time and adjust the process parameters. Among them, in addition to film thickness, refractive index, and film formation rate, the etching rate of the film is also one of the criteria for judging whether the film is qualified. At present, there are two main methods for testing the etching rate: [0003] One method is to make a pattern of the sample to be tested by photolithography, dry etching...

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Problems solved by technology

[0003] One method is to make a pattern of the sample to be tested by photolithography, dry etching and stripping process, and use a step meter to test the step difference between the patterns, so as to reflect the amount of etching and calculate the etching rate; The method requires multiple positions to cooperate with the test, the test is time-consuming, and the generally set test cycle is long, making it difficult to monitor

[0004] Another method is to use wet etching to etch the film layer under the condition of incomplete etching after testing the film thickness with an ellipsometer in advance, then test the film thickness again, and compare the difference between the two to give The result; this method has high requirements on the uniformity of wet etching, and the data of film quality uniformity cannot be obtained, and it also requires the cooperation of other posts

[0005] It can be seen that the existing film etching rate test method needs to make the CVD film circulate in multiple positions when etching the CVD film, which is not conducive to industrial production.

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