White light-emitting device and manufacturing method thereof

A light-emitting device, white light technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of uneven light emission, low light-emitting purity, weak reflection of inorganic phosphors, etc., and achieve the effect of high light-purity and uniform light-emitting

Inactive Publication Date: 2017-06-13
ANHUI SANAN OPTOELECTRONICS CO LTD
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, inorganic phosphors have the disadvantages of weak reflection, low luminous purity, and uneven luminescence.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • White light-emitting device and manufacturing method thereof
  • White light-emitting device and manufacturing method thereof
  • White light-emitting device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] See attached figure 1 , a schematic cross-sectional view of a white light emitting device according to an embodiment of the present invention. The white light emitting device provided by the present invention includes a support 10, a light-emitting diode 20 on the support 10, an organic semiconductor polymer light conversion layer 30, and a transparent encapsulation structure 40 for protecting and fixing the light-emitting diode 20. The light conversion layer 30 absorbs The first light A emitted by the light emitting diode 20 is converted into a second light B different from the first light A, and the first light A and the second light B are mixed in the transparent encapsulation structure 40 to form white light C. Wherein, the material of the transparent encapsulation structure 40 is an encapsulation resin; the material of the organic semiconducting polymer light conversion layer 30 is a thiophene polymer, especially a high isotactic poly-3-hexylthiophene. In some embo...

Embodiment 2

[0034] The difference between this embodiment and Embodiment 1 is that the organic semiconducting polymer light conversion layer 30 is disposed in the transparent encapsulation structure 40, and the transparent encapsulation structure 40 with the built-in organic semiconducting polymer light conversion layer 30 covers the light emitting diode 20 to protect and Fix the light emitting diode 20 .

[0035] The method for making the above-mentioned light-emitting diodes in this embodiment specifically includes the following steps:

[0036] S21, providing a bracket 10 and a light emitting diode 20;

[0037] S22, arranging an organic semiconductor polymer light conversion layer 30 in a transparent encapsulation structure 40;

[0038] S23 , covering the light-emitting diode 20 with the transparent encapsulation structure 40 built with the organic semiconductor polymer light conversion layer 30 , so as to protect and fix the light-emitting diode 20 .

[0039] Wherein, the organic sem...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention belongs to the field of semiconductors, and particularly relates to a white light-emitting device and a manufacturing method thereof. Organic semiconductor polymer high-isotactic poly3-hexylthiophene is adopted as a light conversion layer, absorbs a blue light emitted by a light emitting diode and converts the blue light into a yellow light; the blue light and the yellow light are mixed in a transparent packaging structure to form a white light. Compared with a white light-emitting diode manufactured by adopting fluorescent powder traditionally, the white light-emitting diode in the invention has higher light purity, and emits more uniform light.

Description

technical field [0001] The invention belongs to the field of semiconductors, and in particular relates to a white light emitting device using a thiophene polymer as an organic semiconductor polymer light conversion layer and a manufacturing method thereof. Background technique [0002] Due to the continuous improvement of its luminous efficiency, light-emitting diodes have gradually replaced traditional fluorescent lamps and incandescent bulbs in many application fields this year. The conventional method of making white light diodes is mainly to use blue light-emitting diode chips with a light emission wavelength of 440nm~460nm to excite inorganic yellow light phosphors, and to generate white light by mixing blue light and fluorescence. However, inorganic phosphors have the disadvantages of weak reflection, low luminescence purity, and uneven luminescence. Contents of the invention [0003] In order to solve the above deficiencies, in one aspect of the present invention, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/50H01L33/48
CPCH01L33/48H01L33/50H01L33/502H01L2933/0041
Inventor 宋长伟程志青黄文宾徐志波林兓兓蔡吉明张家宏
Owner ANHUI SANAN OPTOELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap