A ru-based catalyst and its co 2 Application in methanation
A catalyst and carrier technology, applied in the field of preparation of Ru-based catalysts, can solve the problems of difficulty in accurately controlling the loading amount, uneven metal loading, easy loss of active components, etc. The effect of sintering growth
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Embodiment 1
[0021] Pure phase rutile TiO 2 Preparation of vectors. The specific process is as follows: measure 30mL TiCl 4 Solution (0.91mol L -1 , HCl concentration 3.06mol L -1 ) into a 100mL beaker, diluted to 50mL with deionized water, placed in a 60°C water bath and stirred for 4h, then allowed to stand for 1h; then washed with deionized water, filtered until the filtrate was neutral, and the white filter cake was placed in a 120°C oven After being dried in medium temperature, it was calcined in air atmosphere at 500℃ for 2h to obtain r-TiO 2 . Example 2
Embodiment 2
[0022] Preparation of 5wt% Ru / r-TiO by Excess Impregnation 2 catalyst. The specific steps are: measure 0.95g 30wt% RuCl 3 Put the solution in a 100mL beaker, add deionized water to dilute to 30mL, and weigh 2.0g r-TiO 2 Carrier added RuCl 3 In the solution, after ultrasonic dispersion is uniform, place it in a 50°C water bath and stir until the solution is volatilized and nearly dry; then wash with deionized water until neutral, dry the filter cake at 120°C for 12 hours, and then roast it in air at 300°C for 4 hours; Finally, the sample was washed several times with dilute ammonia water (1mol) to remove residual Cl - ions, and then dried at 60°C for 12h, and then reduced in raw gas at 400°C for 1h to produce 5wt% Ru / r-TiO 2 .
Embodiment 3
[0024] Preparation of 5wt% Ru / r-TiO by Atomic Layer Deposition 2 catalyst. The specific steps are: a) r-TiO 2 Disperse in absolute ethanol, after ultrasonic treatment for a period of time to obtain a suspension of dispersed particles, and then slowly evaporate the ethanol solution in the suspension to dryness to obtain dry r-TiO 2 sample. Transfer this sample to the atomic layer deposition sample chamber; b) clean the sample chamber and pipeline of the atomic layer deposition equipment with nitrogen; c) set the parameters of atomic deposition as follows: use normal temperature RuCp 2 is the Ru source precursor, the pulse injection and cleaning time of the precursor are set to 0.5s and 5s respectively; the deposition temperature of the sample chamber is set to 300°C; O 3 The pulse injection and cleaning time of the source are set to 1s and 5s respectively; the cycle deposition is 180-500 times; d) the above sample is taken out and ground for a while, and after pretreatment i...
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