Wafer machining method and machining apparatus
A processing method and wafer technology, applied in metal processing equipment, manufacturing tools, laser welding equipment, etc., can solve problems such as device quality degradation and wafer cracks, and achieve the effect of improving productivity
Active Publication Date: 2017-06-23
DISCO CORP
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Problems solved by technology
However, there is a problem that when pulsed laser light is continuously irradiated to one part at a high repetition rate, cracks are generated on the wafer due to heat accumulation, and the quality of the device deteriorates.
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Embodiment Construction
[0027] Hereinafter, a preferred first embodiment of the processing method of the present invention and a processing apparatus for carrying out the processing method will be described in detail with reference to the drawings.
[0028] figure 1 A perspective view of a laser processing device 1 for implementing the wafer processing method of the present invention is shown in , the laser processing device 1 has: a stationary base 2; A means to move in the axial direction is arranged on the stationary base 2 to hold the workpiece; and a laser beam irradiation unit 4 is arranged on the stationary base 2 . The chuck table mechanism 3 has: a pair of guide rails 31, 31 arranged parallel to the stationary base 2 along the X-axis direction; a first slide block 32 arranged so as to be movable in the X-axis direction Provided on the guide rails 31, 31; the second sliding block 33 is arranged on the first sliding block 32 in a manner capable of moving in the Y-axis direction shown by the a...
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Abstract
The subject of the invention is to provide a wafer machining method and machining apparatus that can maintain maximum repetitive frequency of the limited pulse laser ray and form through holes at multiple parts at the same time. According to the invention, the machining method includes the following steps: an oval rail generation step in which 4 devices are take as a group to generate oval rails including circles for 4 electrode pads which are at the same position in respective device; a laser ray radiation step in which as the oval rails are drawn, a pulse laser ray is radiated positions corresponding to the 4 electrode pads from the back side of a wafer; and an oval rail positioning step in which the oval rail is positioned so as to enable the oval rail to correspond the 4 electrode pads which are to be processed in the following, and wafer and the pulse laser ray radiation unit are processed accordingly and at the same time the laser ray radiation step and the oval rail positioning step are implemented so as to implement through hole processing.
Description
technical field [0001] The present invention relates to a wafer processing method and processing apparatus for forming laser processing holes corresponding to electrode pads of devices disposed on workpieces such as semiconductor wafers. Background technique [0002] In the manufacturing process of a semiconductor device, a plurality of regions are divided on the front surface of a substantially disk-shaped semiconductor wafer by dividing lines called streets arranged in a grid pattern, and ICs are formed in the divided regions. , LSI and other devices. Then, by cutting the semiconductor wafer along the lanes, the regions where the devices are formed are divided to manufacture individual semiconductor chips. [0003] In order to achieve miniaturization and high functionality of the device, a modular structure has been proposed in which a plurality of devices are stacked and electrode pads (also referred to as pads) provided on the stacked devices are connected. This module...
Claims
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IPC IPC(8): B23K26/382B23K26/046B23K26/70H01L21/768
CPCH01L21/76898B23K26/046B23K26/382B23K26/702B23K2103/56H01L21/76H01L21/78H01L21/268H01L21/76805
Inventor 能丸圭司
Owner DISCO CORP