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Enhanced nitride field effect transistor and preparation method thereof

A nitride field and enhanced technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of inaccurate control of trench etching depth, complex process of enhanced devices, and difficulty in industrial production of devices, etc. question

Inactive Publication Date: 2017-06-27
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0006] In view of this, the main purpose of the present invention is to provide a method for preparing an enhancement-mode nitride field-effect transistor to solve the problem that the process of the enhancement-mode device is relatively complicated, the process is difficult, the etching depth of the groove cannot be accurately controlled, and the device Difficult problems in industrial production

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  • Enhanced nitride field effect transistor and preparation method thereof
  • Enhanced nitride field effect transistor and preparation method thereof
  • Enhanced nitride field effect transistor and preparation method thereof

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Embodiment Construction

[0046] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0047] figure 1 It is a schematic diagram of the structure of an enhanced nitride multi-channel field effect transistor provided by the present invention, including:

[0048] -Substrate 11, the substrate may be one of sapphire, SiC or Si substrate;

[0049] -The nucleation layer 12, the nucleation layer 12 is gallium nitride or aluminum nitride, the nucleation layer 12 is fabricated on the substrate 11, and the thickness of the nucleation layer can be 10 nm to 150 nm.

[0050] -Indium gallium nitride (InGaN) high-resistance buffer layer 13, the indium gallium nitride (InGaN) high-resistance buffer layer 13 is fabricated on the nucleation layer 12, where In x Ga 1-x N(0≤x6 Ω-10 11 Ω;

[0051] -Aluminum indium gallium nitride (A...

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Abstract

The invention discloses an enhanced nitride field effect transistor and a preparation method thereof. The method comprises the steps of growing a nucleation layer, an indium gallium nitride high resistance buffer layer and an aluminum indium gallium nitride barrier layer on a substrate in sequence; preparing a source and a drain on the aluminum indium gallium nitride barrier layer; etching a single groove or multiple grooves between the source and the drain, the groove(s) having a depth greater than the thickness of the aluminum indium gallium nitride barrier layer and being filled with an electrolyte material with a high dielectric constant and a wide band gap, and preparing a gate above the groove(s); and preparing a passivation layer among the source, drain and gate to complete the transistor production.

Description

Technical field [0001] The invention belongs to the field of semiconductors, and in particular relates to an enhanced field effect transistor and a preparation method thereof. Background technique [0002] Gallium nitride (GaN) materials have a broad band gap, high thermal conductivity, high electron saturation drift speed, and large critical breakdown voltage, so they can be used in optoelectronic devices and high-temperature high-power electronic devices. Application prospects. Due to the strong spontaneous polarization and piezoelectric polarization effects of nitride, a large amount of two-dimensional electron gas can be generated at the AlGaN / GaN interface without doping, and its concentration can reach 10 13 cm -2 , The electron mobility is above 2000cm2 / V·s. Due to the above characteristics, AlGaN / GaN high electron mobility transistors have become ideal materials for the preparation of high frequency power amplifiers and power switching devices. [0003] At present, the pe...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/778H01L21/336
CPCH01L29/0603H01L29/0649H01L29/66477H01L29/778
Inventor 马平姬小利李喜林刘波亭王军喜李晋闽
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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