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A germanium-on-insulator substrate structure and its preparation method

A technology of germanium substrate and insulator, which is applied in the field of germanium substrate structure on insulator and its preparation, can solve the problem that the thickness of the isolation layer affects the quality of bonding, and achieve the effect of reducing heat loss

Active Publication Date: 2020-04-21
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The embodiment of the present application provides a germanium-on-insulator substrate structure and its preparation method, which solves the problem in the prior art that the thickness of the isolation layer affects the bonding quality in the process of forming germanium-on-insulator by wafer bonding. question

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  • A germanium-on-insulator substrate structure and its preparation method
  • A germanium-on-insulator substrate structure and its preparation method
  • A germanium-on-insulator substrate structure and its preparation method

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preparation example Construction

[0039] A method for preparing a germanium-on-insulator substrate, comprising:

[0040] preparing a germanium layer on the second silicon layer;

[0041] Prepare an isolation layer, the isolation layer includes n alternating layers, wherein n is an integer greater than 1, each of the alternating layers includes an insulating layer and a high-k dielectric layer; the isolation layer is located on the first silicon layer and the germanium layer.

[0042] In another aspect, a germanium-on-insulator substrate structure includes:

[0043] first silicon layer;

[0044] germanium layer;

[0045] a second silicon layer at the bottom of the germanium layer;

[0046] An isolation layer, the isolation layer is located between the first silicon layer and the germanium layer; the isolation layer includes n alternating layers, wherein n is an integer greater than 1, and each of the alternating layers includes a layer insulating layer and a high-k dielectric layer.

[0047] In order to b...

Embodiment 1

[0049] This embodiment provides a method for preparing a germanium-on-insulator substrate, such as figure 1 shown, including:

[0050] Step 100: preparing a germanium layer on the second silicon layer.

[0051] Step 200: preparing an isolation layer on the first silicon layer.

[0052] Wherein, preparing the isolation layer includes preparing n alternating layers, where n is an integer greater than 1, and each of the alternating layers includes an insulating layer and a high-k dielectric layer.

[0053] The preparation of the alternating layers is:

[0054] preparing the insulating layer;

[0055] The high-k dielectric layer is prepared on the insulating layer.

[0056] The thickness of the isolation layer is 100-200nm, and the thickness of the isolation layer is higher than the threshold thickness of the isolation layer. Therefore, it can effectively ensure the bonding quality and prevent germanium from being caused in the subsequent thinning or chemical mechanical polish...

Embodiment 2

[0069] This embodiment provides a method for preparing a germanium-on-insulator substrate, such as figure 2 shown, including:

[0070] Step 100: preparing a germanium layer on the second silicon layer.

[0071] Step 200: preparing an isolation layer on the germanium layer.

[0072] Wherein, preparing the isolation layer includes preparing n alternating layers, where n is an integer greater than 1, and each of the alternating layers includes an insulating layer and a high-k dielectric layer.

[0073] The preparation of the alternating layers is:

[0074] preparing the high-k dielectric layer;

[0075] The insulating layer is prepared on the high-k dielectric layer.

[0076] The thickness of the isolation layer is 100-200nm, and the thickness of the isolation layer is higher than the threshold thickness of the isolation layer. Therefore, it can effectively ensure the bonding quality and prevent germanium from being caused in the subsequent thinning or chemical mechanical po...

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Abstract

The invention belongs to the technical field of semiconductor integration, and discloses a germanium-on-insulator substrate structure and a preparation method therefor. The preparation method comprises the steps of preparing a germanium layer on a second silicon layer; preparing an isolation layer, wherein the isolation layer comprises n alternate layers; each alternate layer comprises an insulating layer and a high-k dielectric layer; and the isolation layer is positioned between a first silicon layer and the germanium layer. The germanium-on-insulator substrate structure comprises the first silicon layer, the germanium layer, the second silicon layer, and the isolation layer, wherein the second silicon layer is positioned at the bottom of the germanium layer; the isolation layer is positioned between the first silicon layer and the germanium layer; the isolation layer comprises n alternate layers; and each alternate layer comprises the insulating layer and the high-k dielectric layer. By adoption of the germanium-on-insulator substrate structure and the preparation method therefor, the problem that the bonding quality is affected by the layer thickness of the isolation layer in the formation process of the germanium-on-insulator by adopting a wafer bonding method in the prior art can be solved, and a technical effect of obtaining a high-quality bonded wafer can be achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductor integration, in particular to a germanium-on-insulator substrate structure and a preparation method thereof. Background technique [0002] As the feature size of MOS devices has reached the nanometer level, the traditional SiO2 / Si system can no longer meet the requirements of the development of integrated circuits. However, the use of high-k gate dielectric reduces the gate leakage and also reduces the channel carrier mobility, which reduces the driving capability of the device. Therefore, it is necessary to adopt high-mobility channel materials and new device structures to improve the overall performance of the device. Among them, the germanium-on-insulator (GeOI) substrate has both high mobility and electrostatic integrity, so it has become one of the research hotspots in recent years. [0003] In the process of forming germanium-on-insulator (GeOI) by wafer bonding, there is a threshold...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/762
CPCH01L21/7624
Inventor 王桂磊亨利·雷德森李俊峰赵超
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI