Bipolar transistor and method of forming same

Abstract

The invention relates to a bipolar transistor and a formation method thereof. The formation method of the bipolar transistor comprises the steps of providing a semiconductor substrate, wherein fins parts are formed on a surface of the semiconductor substrate; forming an isolation layer on the surface of the semiconductor substrate, wherein a surface of the isolation layer is lower than surfaces of top parts of the fin parts, and the isolation layer covers parts of side walls of the fin parts; forming a second type of doping well in the semiconductor substrate and the fin parts; forming a first type of doping region in the fin parts; forming a second type of doping region in the fin parts, wherein the first type of doping region and the second type of doping region are distributed along a length direction of the fin parts; forming a second type of heavy-doping layer on a part of a surface of the first type of doping region and a surface of the second type of doping region; and forming a first type of heavy-doping layer on a part of the surface of the first type doping region. By the method, the integration of the formed bipolar transistor can be improved, and the fabrication process is compatible with a complementary metal-oxide-semiconductor (CMOS) fabrication process.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a bipolar transistor and a method of forming the same. Background technique [0002] With the continuous development of semiconductor technology and the continuous development of semiconductor process technology, process nodes are gradually reduced, and fin field effect transistors (Fin FETs) as a multi-gate device have received widespread attention. The process flow of fin-type field effect transistors and the process flow of planar transistors have been greatly changed. [0003] Bipolar transistors are one of the common device structures that constitute modern large-scale integrated circuits. They have fast operation speed, low saturation voltage drop, high current density and low production cost. [0004] The current manufacturing method of bipolar transistors in integrated circuits is still manufactured in accordance with the process flow of traditional planar transist...

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Problems solved by technology

[0005] Therefore, the integration level of existing bipolar transistors needs to be further improved.

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