Unlock instant, AI-driven research and patent intelligence for your innovation.

A system and method for improving the depth resolution of a secondary ion mass spectrum with a multilayer structure

A technology of secondary ion mass spectrometry and depth resolution, applied in the field of analytical instruments, can solve problems such as reducing depth resolution, and achieve the effects of improving resolution, avoiding interference, and reducing depth

Inactive Publication Date: 2020-02-25
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using traditional secondary ion mass spectrometers for depth profiling of multilayer structures, since the upper layer (such as sample 1 or 2) will generate interference signals, the depth resolution will be greatly reduced, so a method to improve the secondary ion structure of multilayer structures is needed. Systems and methods for mass spectrometry depth resolution

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A system and method for improving the depth resolution of a secondary ion mass spectrum with a multilayer structure
  • A system and method for improving the depth resolution of a secondary ion mass spectrum with a multilayer structure
  • A system and method for improving the depth resolution of a secondary ion mass spectrum with a multilayer structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] In order to make the purpose, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Example.

[0029] The present invention adopts an analysis method for improving the depth resolution of the secondary ion mass spectrum of a multilayer structure, and the specific analysis process is as follows:

[0030] Such as image 3 As shown in (a), the primary ion source produces high-energy focused positive ions, negative ions or a focused ion beam in which positive and negative ions coexist. The beam spot diameter is 20nm~200μm, and the energy is 5~50keV. The ion beam pulse width generated in the pulse working mode is 5~500 nanoseconds. The generated primary ion beam is focused and bombarded on the su...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a system and method for increasing depth resolution of secondary ion mass spectroscopy for a multilayer structure; the system comprises a primary ion source, an inert element ion source, a crater depth measurer, a secondary ion mass spectrometer, an ion signal detector and other parts. An inert element ion beam in pulse operating mode is used to remove a tested layer of the multilayer structure by means of etching, the disturbance to secondary ion signals under test in a crater due to etched crater edge material being sputtered to the crater center is avoided, depth profiling resolution is increased, crater depth is also decreased, and surface coarseness of the sputtering crater is inhibited effectively. The system and method are important to actual analytical tests.

Description

technical field [0001] The invention relates to the technical field of analytical instruments, in particular to a system and method for improving the depth resolution of a multilayer structure secondary ion mass spectrum. Background technique [0002] Secondary Ion Mass Spectrometry (SIMS, Secondary Ion Mass Spectrometry) uses mass spectrometry to analyze the secondary ions generated by the primary ion sputtering sample, and can obtain the information of the sample surface and matrix elements, isotopes and compounds, and has high detection sensitivity. It can reach the order of ppm or even ppb. By exfoliating the sample layer by layer, the distribution of various components with depth can be obtained, which is depth profiling. This testing technique has been widely used in multi-layer structure, coating layer analysis, multi-quantum well structure and so on. An accurate depth analysis requires uniform bombardment of the analysis area to form a flat-bottomed pit, and the de...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/64
CPCG01N27/64
Inventor 杨萍董鹏宋宇张光辉李沫代刚张健
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS