Manufacturing method of tft substrate and tft substrate
A manufacturing method and substrate technology, which are applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of inconsistent loss of the active layer 300, difficult process control, product abnormalities, etc., to achieve improved uniformity, improved Product quality, effect of avoiding etch stop
Active Publication Date: 2019-10-11
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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Problems solved by technology
[0009] In step 2 of the above method for manufacturing the TFT substrate, since the total thickness of the interlayer dielectric layer 600 and the gate insulating layer 400 is relatively large, it is difficult to control the process of etching both of them at the same time, and it is easy to cause via holes to fail. Inconsistent loss of active layer 300 caused by engraving or through-hole over-etching, resulting in product abnormalities
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[0051] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.
[0052] see Figure 4 , the invention provides a kind of manufacturing method of TFT substrate, comprises the following steps:
[0053] Step 1, such as Figure 5 As shown, a base substrate 10 is provided, and a buffer layer 20 and an active layer 30 are sequentially fabricated on the base substrate 10 from bottom to top;
[0054] performing ion doping on both ends of the active layer 30 to form two heavily ion-doped regions 31;
[0055] A gate insulating layer 40 is formed on the active layer 30 and the buffer layer 20 .
[0056] Specifically, the base substrate 10 is a glass substrate.
[0057] Specifically, the material of the buffer layer 20 is silicon nitride (SiN x ) and silicon oxide (SiO x ) in one or more combinations.
[0058] S...
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The invention provides a manufacturing method of a TFT substrate and a TFT substrate. In the manufacturing method of the TFT substrate of the present invention, firstly etch the gate insulating layer to form two first via holes, and form two bridging metal blocks in the two first via holes, and then etch the interlayer dielectric layer to form two via holes respectively connected to the two first via holes. Two second vias connected by one via, the source and the drain are respectively in contact with the two jumper metal blocks through the two second vias, and the gate insulating layer and the interlayer dielectric layer are fabricated by the traditional one-time etching process The via hole structure is improved to two etching processes, which can improve the uniformity of the active layer, reduce the difficulty of the process, avoid the problem of etching stop caused by thick etching thickness, and improve product quality.
Description
technical field [0001] The invention relates to the field of display technology, in particular to a manufacturing method of a TFT substrate and the TFT substrate. Background technique [0002] With the development of display technology, liquid crystal displays (Liquid Crystal Display, LCD) and other flat display devices are widely used in mobile phones, televisions, personal Various consumer electronic products such as digital assistants, digital cameras, notebook computers, and desktop computers have become the mainstream of display devices. [0003] Most of the liquid crystal display devices currently on the market are backlight liquid crystal displays, which include a liquid crystal display panel and a backlight module. The working principle of the liquid crystal display panel is to place liquid crystal molecules between two parallel glass substrates. There are many vertical and horizontal small wires between the two glass substrates. The direction of the liquid crystal ...
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IPC IPC(8): H01L21/84H01L27/12
CPCH01L27/124H01L27/127H01L27/1296H01L27/1248H01L27/1288H01L29/78621
Inventor 张海杰张占东杨玲
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD