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Electrostatic discharge protection with integrated diode

An electrostatic discharge and diode technology, applied in the field of electrostatic discharge protection using integrated diodes, can solve problems such as the efficiency of ESD protection implementation

Inactive Publication Date: 2017-08-18
NXP BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] For a variety of applications, these and other considerations pose challenges to the effective implementation of ESD protection

Method used

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  • Electrostatic discharge protection with integrated diode
  • Electrostatic discharge protection with integrated diode
  • Electrostatic discharge protection with integrated diode

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Embodiment Construction

[0039] Aspects of the present disclosure are believed to be applicable to various types of devices, systems, and methods related to ESD protection. In certain embodiments, aspects of the invention have been shown to be beneficial in the context of ESD protection for relatively high voltage nodes. In some embodiments, ESD protection may include embedded silicon controlled rectifier (eSCR) components, which are convenient for high voltage nodes. These and other aspects can be implemented to address challenges including those discussed in the background above. While not necessarily so limited, various aspects can be appreciated through the discussion using examples of such illustrative situations.

[0040] Various embodiments of the present disclosure relate to series stacks of bipolar (PNP-based) transistors, which are especially useful for high voltage applications (eg, 20V, 30V, and even higher). Specific embodiments relate to an area efficient and latch-up proof PNP-eSCR (P...

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Abstract

An apparatus can include a first circuit that is configured to provide electrostatic discharge (ESD) protection against an ESD pulse applied between a first node and a second node. The first circuit includes a series stack of bipolar transistors that are configured to shunt current between the first and second nodes in response to the ESD pulse; and a diode connected in series with the stack of bipolar transistors and configured to lower a snapback holding voltage of the first circuit when shunting current between the first and second nodes.

Description

technical field [0001] Aspects of various embodiments relate to electrostatic discharge (ESD) protection circuits and circuits including integrated diodes for setting snapback holding voltage or other properties. Background technique [0002] Electrostatic discharge (ESD) is a sudden electrical current that can result from the buildup of static electricity between two devices in electrical contact. An ESD event can occur when objects come close enough to rupture the dielectric between them. ESD events are responsible for many failures of integrated circuit (IC) devices and chips. ESD protection can be provided using a number of different circuit solutions. The operational characteristics of ESD protection may be limited by IC die clearance, manufacturing process and cost, and technical limitations. As device capabilities change, ESD protection technology solutions may no longer be able to match device capabilities. [0003] For a variety of applications, these and other ...

Claims

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Application Information

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IPC IPC(8): H01L27/02
CPCH01L27/0248H01L27/0259H02H9/046H01L27/0255H01L29/66371H01L29/7416
Inventor 赖大伟
Owner NXP BV