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Transistor thermal and emi management solution for fast edge rate environment

An edge-rate, fast-signal technology for transistor applications

Inactive Publication Date: 2017-08-18
HIQ SOLAR
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Additionally, high switching speeds and fast edge rates can be a cause of electromagnetic interference (EMI), which is often undesirable and must be managed

Method used

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  • Transistor thermal and emi management solution for fast edge rate environment
  • Transistor thermal and emi management solution for fast edge rate environment
  • Transistor thermal and emi management solution for fast edge rate environment

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Embodiment Construction

[0022] Exemplary embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Such illustrations are intended to be illustrative and not limiting with respect to the scope of the invention. These embodiments are described in detail sufficient to enable those skilled in the art to practice the invention, and it is to be understood that other embodiments may be practiced in some altered manner without departing from the spirit or scope of the subject invention .

[0023] 1. Transistor Mounting

[0024] figure 1 An implementation of transistor mounting is shown in . The transistor (201) is attached to a printed circuit board (PCB) (206). The leads (example 221) of the transistor (201) are truncated, bent down and soldered to the conductive trace area (220). Between the transistor (201) and the PCB (206) are three layers of thermal material (205, 204, 203). The PCB (206) is attached to the heat sink (202) by a layer of h...

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PUM

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Abstract

An electronic device mounting technique in which insulative and thermal barrier materials used in combination with printed circuit board design produce higher electrical breakdown voltage while minimizing thermal resistance and electromagnetic interference.

Description

technical field [0001] The present invention relates to transistors mounted for operation in a fast edge rate signal environment without electrical device breakdown, and in particular to transistors mounted so that the transistor has both low thermal resistance and high electric field containment to Transistors that reduce electromagnetic interference (EMI). Background technique [0002] Thermal management of transistors is typically accomplished by attaching the transistor's thermal tab to a heat sink. The thermal tab of the transistor is usually electrically connected to one of the electrodes, and thus it is often desirable for the thermal tab to electrically insulate the transistor case from the heat sink. It is also desirable for insulating materials to have the lowest possible thermal resistance while exhibiting high electrical resistance. [0003] When transistors are used in circuits where switching edge speeds are high (e.g., 100V / ns edge rates) and thermal tabs ar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05K1/02
CPCH05K1/0206H01L23/3677H01L23/3737H01L23/552H01L2924/0002H05K1/021H05K1/024H05K2201/10166H01L2924/00
Inventor A·P·威利斯
Owner HIQ SOLAR