Method of making inorganic thin-film transistor, and flexible display device

A technology of a flexible display device and a manufacturing method, which are applied in the fields of semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of poor device stability, cumbersome flexible electronics manufacturing process, high cost, etc., and achieve good electrical performance, Cost savings and reduced process requirements

Inactive Publication Date: 2017-08-25
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] Inorganic thin-film transistors (Thin-film transistor, referred to as TFT) are superior to organic thin-film transistors in many aspects of e

Method used

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  • Method of making inorganic thin-film transistor, and flexible display device
  • Method of making inorganic thin-film transistor, and flexible display device
  • Method of making inorganic thin-film transistor, and flexible display device

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[0018] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention can be implemented in many different forms, and the present invention should not be construed as being limited to the specific embodiments set forth herein. On the contrary, these embodiments are provided to explain the principle of the present invention and its practical application, so that other skilled in the art can understand various embodiments of the present invention and various modifications suitable for specific anticipated applications.

[0019] In the drawings, in order to clearly show the device structure, the thickness of layers and regions are exaggerated. The same reference numerals denote the same components throughout the specification and drawings.

[0020] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, the element can be directly ...

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Abstract

The invention provides a method of making an inorganic thin-film transistor, comprising the following steps: sequentially forming a P-type semiconductor layer and an N-type semiconductor layer on a rigid substrate; forming a groove passing through the N-type semiconductor layer in the P-type semiconductor layer; forming a source and a drain at the two sides of the groove on the N-type semiconductor layer; transferring the P-type semiconductor layer, the N-type semiconductor layer, the source and the drain to a flexible substrate by means of turning transfer; sequentially forming a gate insulating layer and a gate on the P-type semiconductor layer; and forming a flat layer covering the gate on the gate insulating layer. The invention further provides a flexible display device of an inorganic thin-film transistor made using the method. An inorganic thin-film transistor which is applicable to a flexible display process and has good electrical property is prepared through a nano imprint method. By designing the structure of the inorganic thin-film transistor, a narrow-channel inorganic thin-film transistor device is obtained. The process requirement is lowered, and the cost is saved.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a method for manufacturing an inorganic thin film transistor used in a flexible display device and a flexible display device. Background technique [0002] Inorganic thin-film transistors (TFT for short) are superior to organic thin-film transistors in many aspects of electrical performance, but flexible electronics based on inorganic thin-film transistors are cumbersome, costly, and have poor device stability. Inorganic thin film transistors combined with nanoimprinting and transfer printing technologies can not only ensure high electron mobility and saturation velocity, but also bring flexibility and bending resistance close to organic thin film transistors. [0003] Therefore, it is necessary to provide a method for fabricating inorganic thin film transistors using nanoimprint and transfer printing techniques. Contents of the invention [0004] The invention pr...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L29/06H01L21/683H01L27/32
CPCH01L29/0665H01L29/66772H01L21/6835H01L2221/68345H10K59/1213
Inventor 梁博
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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