Mask plate and fabrication method thereof

Abstract

The invention discloses a mask plate fabrication method. The method comprises the steps that a substrate is provided; an electric-conductive transition layer is formed on the substrate; an insulating mask plate definition layer is formed on the transition layer, and the mask plate definition layer is provided with a plurality of openings to expose the transition layer; the mask plate definition layer is served as a mask, the transition layer exposed by the multiple openings in the mask plate definition layer is served as an electrode, an electroforming process is adopted, and electroforming films are formed in the openings of the mask plate definition layer; the mask plate definition layer is removed, and the electroforming films are reserved; a mechanical stripping process is adopted, the electroforming films are stripped from the transition layer, and a mask plate is obtained; and the adhesive force between the electroforming films and the transition layer is smaller than that between the transition layer and the substrate and smaller than that between the electroforming films and the substrate. Compared with the prior art, in the process of stripping the electroforming films from the transition layer, the damage to the electroforming films is reduced, and the yield of the mask plate is increased to a certain degree.

Description

technical field [0001] The present application relates to the field of mask technology, and more specifically, to a mask and a manufacturing method thereof. Background technique [0002] The mask plate is one of the tools often used in the manufacturing process of semiconductor chips, micro-electromechanical products, display panels, etc. It can be combined with photolithography, evaporation, sputtering and other processes to form semiconductor structures. In general, the mask plate is to make the opening required by the process on a specific position of the metal sheet, and then perform photolithography, etching, evaporation, sputtering and other processes to form a specific pattern on the semiconductor film layer. [0003] With the development of semiconductor technology, the process size is getting smaller and smaller, the precision of the mask is getting higher and higher, and its thickness is getting thinner and thinner. The common preparation method of this high-preci...

AI Technical Summary

Problems solved by technology

However, the inventors have found that the masks produced by the prior art are often damaged, that is, the yield of the masks is low

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