Flip-flop structure of lighting device and making method thereof

Abstract

The invention relates to a flip-flop structure of a lighting device and a making method thereof. The flip-chip structure of the lighting device includes a substrate, a buffer layer, an N-type nitride semiconductor layer, an active layer and a P-type nitride semiconductor layer which are laminated. A transparent conductive layer is disposed on the P-type nitride semiconductor layer, the transparent conductive layer is etched to the active layer using the yellow light etching process to expose the N-type nitride semiconductor layer, and a convex mesa is obtained. A P-type contact metal is disposed on the transparent conductive layer, and an N-type contact metal is disposed on the exposed N-type nitride semiconductor layer. A first insulating layer is deposited and etched to expose a portion of the P/N type contact metal. A flip-chip P-type electrode is disposed on the exposed P-type contact metal, and a flip-chip N-type electrode is disposed on the exposed N-type contact metal. A second insulating layer is then deposited and etched to expose a portion of the flip-chip P/N type electrode. In the production of the convex mesa, the accuracy is reduced and the yield is improved by the combination of circular and long strip holes.

Description

technical field [0001] The invention relates to the field of lighting technology, in particular to a flip-chip structure of a lighting device and a manufacturing method thereof. Background technique [0002] In the flip-chip structure of the lighting device, the substrate and the electrode layer are located on both sides of the active layer, and the light excited by the active layer needs to be emitted from the substrate and cannot pass through the electrode layer. A highly reflective material is added to one side of the substrate to reflect light. Commonly used methods include the following two methods: the first method is to directly coat a layer of high-reflectivity metal, such as Ag, Al, etc., between the active layer and the electrode layer. As an ohmic contact layer; the second way is to set the electrode layer as a transparent electrode layer with high transmittance, and then cover a layer of metal with high reflectivity on the transparent electrode layer, such as IT...

AI Technical Summary

Problems solved by technology

[0003] Based on this, it is necessary to provide a flip-chip structure of a lighting device with a high yield and a m

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