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A kind of nano aluminum nitride powder and its preparation method and application

A nano-aluminum nitride and powder technology, applied in the field of ceramic materials, can solve the problems of easy agglomeration, large AlN particles and low purity, and achieve the effects of good crystallinity, complete decomposition and high purity

Active Publication Date: 2020-10-16
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with other methods, the AlN particles prepared by the existing AlN urea solution method are relatively large, low in purity, and easy to agglomerate, etc.

Method used

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  • A kind of nano aluminum nitride powder and its preparation method and application
  • A kind of nano aluminum nitride powder and its preparation method and application
  • A kind of nano aluminum nitride powder and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] 1. Using aluminum chloride hydrate and dicyandiamide as raw materials, set the molar ratio of dicyandiamide / aluminum chloride to 3:1, weigh 1g of aluminum chloride hydrate and 1.04g of dicyandiamide, and add an appropriate amount of aluminum chloride ( AlCl 3 ·6H 2 O, 99.99%) and dicyandiamide (C 2 h 4 N 4 , 99%) were dissolved in methanol at 30°C, and after being completely dissolved, the dicyandiamide solution was slowly added to the aluminum chloride solution while stirring to obtain a clear and stable precursor salt solution, and the solution was put into an oven drying to obtain precursor salt powder;

[0035] 2. Put the precursor salt powder into an alumina crucible, and calcine it at 1000°C under the protection of a nitrogen atmosphere. The holding time is 5 hours, the heating rate is 3°C / min, and the nitrogen flow rate is 0.4L / min to obtain nano-nitridation Aluminum powder.

Embodiment 2

[0037] 1. Using aluminum chloride hydrate and dicyandiamide as raw materials, set the molar ratio of dicyandiamide / aluminum chloride to 4:1, weigh 1g of aluminum chloride hydrate and 1.39g of dicyandiamide, and add an appropriate amount of aluminum chloride ( AlCl 3 ·6H 2 O, 99.99%) and dicyandiamide (C 2 h 4 N 4 , 99%) were dissolved in methanol at 30°C, and after being completely dissolved, the dicyandiamide solution was slowly added to the aluminum chloride solution while stirring to obtain a clear and stable precursor salt solution, and the solution was put into an oven drying to obtain precursor salt powder;

[0038] 2. According to the preparation process in Example 1, under the protection of nitrogen atmosphere, calcination was carried out at 1000°C, the holding time was 5h, the heating rate was 3°C / min, and the nitrogen flow rate was 0.4L / min, to obtain nano-aluminum nitride powder .

Embodiment 3

[0040] 1. Using aluminum chloride hydrate and dicyandiamide as raw materials, set the molar ratio of dicyandiamide / aluminum chloride to 5:1, weigh 1g of aluminum chloride hydrate and 1.74g of dicyandiamide, and add an appropriate amount of aluminum chloride ( AlCl 3 ·6H 2 O, 99.99%) and dicyandiamide (C 2 h 4 N 4 , 99%) were dissolved in methanol at 30°C, and after being completely dissolved, the dicyandiamide solution was slowly added to the aluminum chloride solution while stirring to obtain a clear and stable precursor salt solution, and the solution was put into an oven drying to obtain precursor salt powder;

[0041] 2. According to the preparation process in Example 1, under the protection of nitrogen atmosphere, calcination was carried out at 1000°C, the holding time was 5h, the heating rate was 3°C / min, and the nitrogen flow rate was 0.4L / min, to obtain nano-aluminum nitride powder .

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Abstract

The invention discloses a preparation method for nanometer aluminum nitride powder. The preparation method comprises the following steps: with aluminum chloride hexahydrate and dicyandiamide as raw materials, separately dissolving aluminum chloride hexahydrate and dicyandiamide in methanol; after heating and dissolving at a temperature of 30 to 80 DEG C, slowly adding a dicyandiamide solution into an aluminum chloride solution under stirring so as to obtain a clear transparent stable precursor salt solution; carrying out drying and adding obtained precursor salt powder into an alumina crucible; and carrying out calcining at 900 to 1000 DEG C under the protection of a nitrogen atmosphere and carrying out heat preservation for 2 to 5 h so as to obtain nanometer aluminum nitride powder. The preparation method is simple in process and low in production cost. The prepared aluminum nitride powder is small in particle size and high in purity, and has potential development and application value in fields like ceramic substrate material, heat-dissipation filling materials, ultraviolet optic devices, photoluminescent matrix materials and field emission devices.

Description

technical field [0001] The invention belongs to the field of ceramic materials, and more specifically relates to a nano-aluminum nitride powder and its preparation method and application. Background technique [0002] Aluminum nitride (AlN) has potential development and application value in both structural ceramics and functional ceramics. The theoretical thermal conductivity of AlN can reach 320W / m·K, and it has a small thermal expansion coefficient. It is an important ceramic substrate material and heat dissipation filler. AlN has the widest direct bandgap (6.2Ev) in group III nitrides, so it has great application prospects in deep ultraviolet (UV) optical devices and photoluminescence (PL) host materials. AlN has little or even negative electron affinity, and its application in field emission (FE) devices is gradually increasing. In addition, the AlN thin film grown by orientation is a kind of piezoelectric material with high surface acoustic wave propagation velocity. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/581C04B35/626C01B21/072B82Y40/00
CPCC01B21/072C01P2002/72C01P2004/03C01P2004/64C04B35/581C04B35/626C04B2235/95
Inventor 程艳玲黄雄林华泰
Owner GUANGDONG UNIV OF TECH
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