Charge pump and FLAS memory

A charge pump and circuit technology, applied in static memory, read-only memory, information storage, etc., can solve the problem of increasing the area of ​​the charge pump and achieve the effect of reducing the area

Active Publication Date: 2017-09-15
HEFEI HENGSHUO SEMICON CO LTD
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] This design method can indeed reduce the boost time of the charge pump, but it also increases the main capacitor value of the charge pump. Since the area of

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Charge pump and FLAS memory
  • Charge pump and FLAS memory
  • Charge pump and FLAS memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the specific implementation manners of the present invention will be described below with reference to the accompanying drawings. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention, and those skilled in the art can obtain other accompanying drawings based on these drawings and obtain other implementations.

[0034] In order to make the drawing concise, each drawing only schematically shows the parts related to the present invention, and they do not represent the actual structure of the product. In addition, to make the drawings concise and easy to understand, in some drawings, only one of the components having the same structure or function is schematically shown, or only one of them is marked. Herein, "a" not only means "only one", but also means "more than one".

[0035] Such as f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a charge pump. The charge pump comprises N stages of voltage boosting circuits, wherein N in the N stages of voltage boosting circuits is an integer greater than 1; each stage of the voltage boosting circuit comprises a main capacitor; and in the output direction of voltage signals in the N stages of voltage boosting circuits, the main capacitance value in the former stage of the voltage boosting circuits is higher than or equal to that in the next stage of the voltage boosting circuits. Based on a condition of an unchanged main capacitive area, the main capacitance value in each stage is re-allocated; according to charge conservation, the charges in the next stage of the main capacitor are transmitted by the main capacitor in the former stage; if the main capacitance value of the former stage is greater than or equal to that of the next stage, the quantity of charges transmitted from the former stage to the next stage is increased, so that the speed of boosting the output voltage of the charge pump to a stable value is improved; when the main capacitance value of the former stage is higher, the more charges can be stored; and meanwhile, the capacitance value in the next stage is lower, however, the quantity of charges obtained by the capacitor in the next stage in one time is still increased.

Description

technical field [0001] The invention relates to the technical field of a power switch, in particular to a charge pump and a FLAS memory. Background technique [0002] A charge pump is a DC / DC converter whose function is to generate a voltage higher than the supply voltage on-chip. Compared with other DC / DC converters, it requires less peripheral devices and has no electromagnetic wave interference, so it can be widely used in the field of memory technology. [0003] In the field of memory, such as FLASH memory, when reading, writing and erasing the FLASH memory, a voltage higher than the power supply voltage is required, and this voltage is provided by the charge pump in the FLASH chip. [0004] Due to the increasing requirements for the reading speed and writing speed of the FLASH memory, how the charge pump outputs the required high voltage in a shorter time is becoming more and more important. Therefore, the boost speed has become a very important indicator of the charg...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H02M3/07G11C5/14G11C16/30
CPCG11C5/145G11C16/30H02M3/07
Inventor 李政达欧阳托日任军
Owner HEFEI HENGSHUO SEMICON CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap