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The application discloses a semiconductor processing device, a pressure control method and an opening degree valve. The semiconductor processing device divides a process cavity into a first cavity (a substrate processing area) and a second cavity (a pre-evacuation area) through a cross section control part, and the cross section control part can adjust the size of a flow cross section between the two cavities. The pressure control method is as follows: a vacuum pump continuously evacuates the second cavity; when the pressure is increased, the flow cross section is reduced (and is kept greater than zero), so that low-pressure process gas of a previous stage is smoothly discharged, and meanwhile, the first cavity is increased in pressure, and the second cavity forms a low-pressure area; when the pressure is decreased, the flow cross section is increased, and the pressure decrease of the first cavity is realized by utilizing the pressure difference between the two cavities. The opening degree valve adopts a structure in which a baffle and a coaxial rotating shielding piece are matched, and only directional rotation is needed to realize the switching of the opening degree. The scheme improves the pressure switching speed and is suitable for semiconductor processes which need frequent and rapid pressure adjustment.