2results about How to "Fast boost" patented technology

The application belongs to the technical field of heat supply control application, and particularly discloses a multi-variable heat supply optimization control system for a desuperheater and pressure reducer set based on load prediction technology, which comprises a desuperheating and pressure reducing control module, a desuperheater and a pressure reducer, the desuperheating and pressure reducing control module is connected with the desuperheater and the pressure reducer, the desuperheating and pressure reducing control module is composed of a target load prediction optimization algorithm unit, a data relay unit, an artificial intervention target meeting input unit, a multi-variable fuzzy decoupling controller and a Kalman filter.The application has the beneficial effect that the system can design a multi-variable dynamic decoupling module according to the mutual coupling relationship between temperature and pressure, eliminate the coupling influence between the temperature regulation loop and the pressure regulation loop, and when the system needs to quickly increase the load, give a larger opening degree instruction to the pressure regulating door and the temperature regulating door, so that the system can quickly increase the pressure while maintaining the temperature stable, and when the system flow is close to the flow set value, switch to the steady-state controller for flow control.

The application discloses a semiconductor processing device, a pressure control method and an opening degree valve. The semiconductor processing device divides a process cavity into a first cavity (a substrate processing area) and a second cavity (a pre-evacuation area) through a cross section control part, and the cross section control part can adjust the size of a flow cross section between the two cavities. The pressure control method is as follows: a vacuum pump continuously evacuates the second cavity; when the pressure is increased, the flow cross section is reduced (and is kept greater than zero), so that low-pressure process gas of a previous stage is smoothly discharged, and meanwhile, the first cavity is increased in pressure, and the second cavity forms a low-pressure area; when the pressure is decreased, the flow cross section is increased, and the pressure decrease of the first cavity is realized by utilizing the pressure difference between the two cavities. The opening degree valve adopts a structure in which a baffle and a coaxial rotating shielding piece are matched, and only directional rotation is needed to realize the switching of the opening degree. The scheme improves the pressure switching speed and is suitable for semiconductor processes which need frequent and rapid pressure adjustment.