Semiconductor structure and formation method and detection method thereof

Abstract

The invention provides a semiconductor structure and a formation method and a detection method thereof. The semiconductor structure comprises a substrate, a semiconductor device and a test gate structure, and is characterized in that the substrate comprises a device region and a test region which are adjacent to each other; the semiconductor device is located in the device region; the test gate structure is located at the surface of the substrate in the test region, and the test gate structure comprises a heat-conducting gate dielectric layer located at the surface of the substrate in the test region and a test gate located on the heat-conducting gate dielectric layer. The temperature of the test gate is acquired through measuring the resistivity of the test gate structure, thus the temperature of the semiconductor device is acquired, and detection for a heat effect of the semiconductor device is realized. The semiconductor device can be monitored through detecting the heat effect of the semiconductor device so as to prevent the semiconductor device from being unstable in performance because of excessively high temperature.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure, a forming method and a detection method thereof. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher component density and higher integration. Transistors, as the most basic semiconductor devices, are currently being widely used. Therefore, as the component density and integration of semiconductor devices increase, the size of transistors is also getting smaller and smaller. [0003] The channel of the Fin Field Effect Transistor (FinFET) protrudes from the surface of the substrate to form a fin, and the gate covers the top surface and sidewall of the fin, so that an inversion layer is formed on each side of the channel, which can be used on both sides of the circuit. The on and off of the side control circuit can greatly improve the ...

AI Technical Summary

Problems solved by technology

However, due to the narrow fin width of FinFET, it also makes the heat dissipation of FinFET a huge challenge

This causes the self-heating problem of FinFET, which easily leads to unstable performance of FinFET

[0004] However, the self-heating effect of existing FinFETs is difficult to detect, and semiconductor devices are prone to unstable performance

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