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Double heterojunction photodetector and its preparation method

A photodetector, double-heterojunction technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of interface defects, limitations, and high dark current of photodetectors, and achieve low production cost, The effect of long service life and excellent power consumption characteristics

Active Publication Date: 2019-09-20
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, problems such as interface defects will inevitably be introduced in the preparation process of this kind of material, which makes the material have a high background carrier concentration at zero gate voltage, which in turn leads to a high dark current of the photodetector. These problems limit Its application in the field of photoelectric detection

Method used

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  • Double heterojunction photodetector and its preparation method
  • Double heterojunction photodetector and its preparation method
  • Double heterojunction photodetector and its preparation method

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Experimental program
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Embodiment 1

[0041] See figure 1 , Figure 4 and Figure 5 , figure 1 A flow chart of a method for preparing a double heterojunction photodetector provided by an embodiment of the present invention; Figure 4 A kind of MoS provided for the embodiment of the present invention 2 The Raman scattering diagram; Figure 5 A photoluminescence diagram of a hybrid perovskite provided by an embodiment of the present invention.

[0042] The method comprises the steps of:

[0043] (a) cleaning the semi-insulating and translucent substrate;

[0044] (b) growing a bottom electrode layer on said substrate;

[0045] (c) growing a first MoS on the bottom electrode layer 2 layer;

[0046] (d) in the first MoS 2 A hybrid perovskite layer is grown on the layer;

[0047] (e) Growth of a second MoS on the hybrid perovskite layer 2 layer;

[0048] (f) In the second MoS 2 The top electrode is grown on the layer.

[0049] Wherein, step (a) comprises:

[0050] (a1) Selecting a semi-insulating and tr...

Embodiment 2

[0077] See Figure 2a ~ Figure 2f , Figure 2a ~ Figure 2f A schematic diagram of a process flow of a double heterojunction photodetector provided by an embodiment of the present invention. The method comprises the steps of:

[0078] Step 1, select the sapphire substrate 201, such as Figure 2a shown.

[0079] Step 2, depositing a first metal material on the surface of the sapphire substrate 201 to form a bottom electrode layer 202, such as Figure 2b shown.

[0080] Step 3, forming the first MoS on the surface of the bottom electrode layer 202 2 Layer 203 is the light absorbing layer 1, such as Figure 2c shown.

[0081] Step 4, in the first MoS 2 A hybrid perovskite layer 204, that is, a light absorbing layer 2, is formed on the surface of the layer 203, such as Figure 2d shown.

[0082] Step 5, forming a second MoS on the surface of the hybrid perovskite layer 204 2 Layer 205 is the light absorbing layer 3, such as Figure 2e shown.

[0083] Step 6, in the sec...

Embodiment 3

[0112] see again Figure 2a ~ Figure 2f , Figure 2a ~ Figure 2f A schematic diagram of a process flow of a double heterojunction photodetector provided by an embodiment of the present invention. The method comprises the steps of:

[0113] S01: cleaning of the substrate 201: the semi-insulating and translucent sapphire substrate 201 is placed in acetone, ethanol and deionized water for ultrasonic cleaning respectively, and vacuum-dried, such as Figure 2a shown.

[0114] S02: Place the target and substrate 201: Fix the sapphire substrate 201 cleaned in step S01 on the sample tray, put it into the vacuum chamber, place the ITO target on the target position of the radio frequency magnetron sputtering system, and start Vacuum.

[0115]S03: Deposit the ITO bottom electrode layer 202: first pump the cavity to a vacuum state (that is, the pressure is 5×10 -6 Pa), heating the sapphire substrate 201, and adjusting the air pressure in the chamber: wherein, the distance between the...

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Abstract

The invention relates to a method for preparing a double heterojunction photodetector, comprising: (a) cleaning a semi-insulating and translucent substrate; (b) growing a bottom electrode layer on the substrate; (c) growing a bottom electrode layer on the substrate Growth of the first MoS on the bottom electrode layer 2 layer; (d) in the first MoS 2 growing a hybrid perovskite layer on the layer; (e) growing a second MoS on the hybrid perovskite layer 2 layer; (f) in the second MoS 2 The top electrode is grown on the layer. The hybrid perovskite double heterojunction of the present invention can completely deplete the background carriers of the two-dimensional material channel, significantly reduce the dark current of the device, and improve the detection performance of the device under weak light; the preparation process is simple, and the production Low cost, no need for expensive instruments and equipment; the prepared photodetector can work under zero gate voltage and low source-drain bias, has excellent low power consumption characteristics, and has simple structure, high efficiency, fast response, and stable operation ,long lasting.

Description

technical field [0001] The invention belongs to the technical field of semiconductor photoelectric detection, and in particular relates to a double heterojunction photodetector and a preparation method thereof. Background technique [0002] Two-dimensional materials represented by graphene and two-dimensional transition metal chalcogenides have received more and more attention in the field of photodetection. Among them, molybdenum disulfide (MoS 2 ) represented by transition metal sulfide two-dimensional materials have a bandgap close to that of traditional semiconductor materials such as silicon and gallium arsenide, and the energy bandgap changes with the thickness. It has broad application prospects in the field of new photodetection. However, problems such as interface defects will inevitably be introduced in the preparation process of this kind of material, which makes the material have a high background carrier concentration at zero gate voltage, which in turn leads t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K85/30H10K30/15H10K2102/00Y02E10/549
Inventor 贾仁需庞体强栾苏珍张玉明汪钰成刘银涛
Owner XIDIAN UNIV