A method for selective etching of magnetic tunnel junction double-layer hard mask by reactive ion beam
A magnetic tunnel junction, selective technology, applied in the field of etching hard mask, reactive ion beam selective etching of magnetic tunnel junction double-layer hard mask, can solve the problem of low SiN selection ratio, excessive consumption of Ta film, MTJ Problems such as larger pattern size
Active Publication Date: 2020-10-27
SHANGHAI CIYU INFORMATION TECH CO LTD
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Problems solved by technology
[0007] In order to solve the above-mentioned technical problems, the present invention provides a method for selective etching of a magnetic tunnel junction (MTJ) double-layer hard mask by a reactive ion beam, which is especially suitable for preparing MRAM circuits of 65nm and below, in order to solve the problem of Ta on SiN (or SiO 2 ) selection ratio is too low, the size of the MTJ pattern becomes larger when the double-layer mask is transferred, and the Ta film layer is excessively consumed in advance, which reduces the risk of MRAM circuit bit line and MTJ cell short circuit
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[0036] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that all the drawings of the present invention are in simplified form and use inaccurate scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0037] Such as image 3 Shown, a kind of reactive ion beam of the present invention selectively etches the method for magnetic tunnel junction (MTJ) double-layer hard mask, specifically comprises the following steps:
[0038]Step S1: providing a substrate 100 including an MTJ multilayer film, wherein the thickness of the MTJ is 15 nm˜40 nm.
[0039] Step S2: On the substrate, sequentially deposit and form a Ta film layer 101 and a SiN film layer (or SiO 2 film layer) 102, wherein the thickness of the ...
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Abstract
The present invention provides a method of selectively etching the magnetic tunnel dual -layer hard molding of the magnetic etching magnetic tunnel, which includes: Step S1: Provides a substrate that includes a multi -layer film including magnetic tunnel;Form the TA membrane layer and SIN membrane layer; step S3: graphic metastatic magnetic tunnel knot pattern to the SIN membrane layer, using photoresal glue and organic anti -reflective layer to complete the graphic definition of magnetic tunnel knots; step S4: CF: Use CF: 4 Dry -engraving SIN membrane layer metastasis magnetic tunnel cutting pattern to the TA membrane layer; step S5: use dry oxygen to erode to remove the residual photoresal and organic resistance reflex layer; 3 / N 2 Select the SIN membrane layer and TA membrane layer.Can use SIO 2 The membrane layer replaces the above SIN membrane layer, and the step S6 is changed to CHF 3 / O 2 SIO 2 Selective etching of the membrane layer and TA membrane layer.
Description
technical field [0001] The invention relates to a method for etching a hard mask, in particular to a method for selectively etching a magnetic tunnel junction (MTJ, Magnetic Tunnel Junction) double-layer hard mask with a reactive ion beam, and belongs to the technical field of integrated circuit manufacturing. Background technique [0002] In recent years, Magnetic Random Access Memory (MRAM, Magnetic Radom Access Memory) using the magnetoresistance effect of Magnetic Tunnel Junction (MTJ) is considered to be the future solid-state non-volatile memory, which has high-speed reading and writing, large capacity and low energy consumption. specialty. Ferromagnetic MTJ is usually a sandwich structure, which has a magnetic memory layer, which can change the magnetization direction to record different data; an insulating tunnel barrier layer in the middle; a magnetic reference layer, located on the other side of the tunnel barrier layer, which The direction of magnetization remain...
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IPC IPC(8): H01L43/12C23F4/00H10N50/01
CPCC23F4/00H10N50/01
Inventor 张云森
Owner SHANGHAI CIYU INFORMATION TECH CO LTD