Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of igbt overcurrent protection method and device

An overcurrent protection and overcurrent protection voltage technology, applied in the field of IGBT overcurrent protection methods and devices, can solve problems such as temperature and deviation that are not selected for setting overcurrent protection

Active Publication Date: 2020-07-17
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the preset over-current protection Ic value, the analog drive and digital drive usually set the corresponding Uce over-current action value according to the characteristic curve of Uce, Ic, and temperature T, but the temperature when the IGBT is working (usually the junction temperature Tj) Usually it is not the selected temperature for setting the over-current protection, so the actual Ic value when the IGBT over-current operates will deviate from the set over-current protection Ic value (usually about 30%)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of igbt overcurrent protection method and device
  • A kind of igbt overcurrent protection method and device
  • A kind of igbt overcurrent protection method and device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0032] See figure 2 , an embodiment of the present invention provides an IGBT overcurrent protection method, including:

[0033] S21. Obtain the current junction temperature Tj of the IGBT to be protected and the corresponding relationship between the current junction temperature and the characteristic of collector-emitter voltage Uce-collector current Ic;

[0034] Specifically, the junction temperature (junction temperature, Tj) is the operating temperature of the PN junction in the actual semiconductor chi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an IGBT overcurrent protection method and device. The method comprises the following steps of obtaining current junction temperature of a to-be-protected IGBT and a corresponding relation between the current junction temperature and collector-emitter voltage-collector current characteristics; and obtaining a corresponding collector-emitter voltage value as a collector-emitter overcurrent protection voltage value through a preset collector overcurrent protection current value according to the corresponding relation. According to the method and the device, when the IGBT has an overcurrent action, the actual Ic is closer to a set overcurrent protection Ic value.

Description

technical field [0001] The invention relates to the technical field of power equipment protection, in particular to an IGBT overcurrent protection method and device. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor), with MOSFET The advantages of the high input impedance of the GTR and the low conduction voltage drop of the GTR are very suitable for the conversion system with a DC voltage of 600V and above, such as AC motors, frequency converters, switching power supplies, lighting circuits, traction drives and other fields. [0003] The manufacturer has strict restrictions on the safe working area provided by the IGBT, and the time for the IGBT to withstand the overcurrent is only a few microseconds (SCR, GTR and other devices withstand the overcurrent time for tens of microseconds), and the over...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/082H03K17/567
CPCH03K17/0828H03K17/567
Inventor 贺之渊客金坤白建成吕铮冯静波许航宇邓卫华
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com