Pre-estimating method for single event effect cross section of anti-irradiation integrated circuit

Abstract

The invention discloses a pre-estimating method for a single event effect cross section of an anti-irradiation integrated circuit, wherein the method mainly settles a problem of single event effect cross section pre-estimation in the same ground heavy ion acceleration irradiation experiment condition. The pre-estimating method is characterized in that based on a high volume of engineering experiment data, logical relevance between a total ion injection amount and the number of single event effects caused by the ions is analyzed; and according to a single event effect generating mechanism and a statistical theory of probability, a pre-estimating model for a time node [delta]ti+1 when the next single event effect occurs and a pre-estimating model for a whole circuit single event effect cross section delta are established, thereby establishing a logical relation between the total ion injection amount and the number of the caused single event effects. The pre-estimating method settles the problem of single event effect cross section pre-estimation in the same experiment condition and supplies an engineering analysis facility for ground acceleration simulation experiment evaluation for the anti-irradiation integrated circuit. The pre-estimating method can be used for pre-estimating irradiation resistance of a spaceflight microelectronic device.

Description

technical field [0001] The invention belongs to the technical field of ground test verification, and in particular relates to a method for estimating the single event effect cross-section of an anti-irradiation integrated circuit, which can be used for estimating the anti-irradiation performance of aerospace microelectronic devices. Background technique [0002] With the rapid development of my country's space application technology and integrated circuit anti-radiation hardening technology, more and more anti-irradiation integrated circuits are widely used in my country's self-developed spacecraft. When the spacecraft is in orbit, it will Attacked by various particle rays from the universe, the integrated circuit has a single event effect, referred to as SEE. The common single event effects include: single event flip, single event loss of lock, single event function interruption, single event burnout, etc. The ground heavy ion acceleration simulation irradiation test has bec...

AI Technical Summary

Problems solved by technology

During engineering tests, the total fluence of ions is generally irradiated to 10 7 / cm 2 , the irradiation time of a single circuit is generally 20 minutes or even 1 to 2 hours. For a large number of anti-irradiation integrated circuits that are in the peak period of research and development in my country, it is an extremely important test no matter from the perspective of the ground truth test or the identification test. The huge shortage of resources has seriously affected the overall progress of various aerospace engineering missions in our country

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