High voltage fast recovery pin diode and manufacturing method thereof
A technology of PIN diode and manufacturing method, which is applied in the field of semiconductor diode preparation, and can solve problems such as low breakdown voltage and large on-state voltage drop
Active Publication Date: 2020-03-27
深圳市金誉半导体股份有限公司
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Problems solved by technology
[0006] The PIN diode obtained by the preparation method of the above-mentioned PIN diode has a larger on-state voltage drop and a lower breakdown voltage
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[0028] The invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0029] refer to Figure 9 , the present invention provides a high-voltage fast recovery PIN diode, comprising: an N-type substrate 200; an N-type epitaxial layer 210 formed on the surface of the N-type substrate 200; several P-type implanted regions 211 formed by the N-type The surface of the epitaxial layer 210 extends inward; a number of P+ implantation regions 213, each P+ implantation region 213 is formed in a corresponding P-type implantation region 211; a P-implantation layer 270 is formed on the surface of the N-type epitaxial layer 210; two metal layers 230 and 240 are disposed on the bottom of the N-type substrate 200 and on the surface of the P-implantation layer 270 to form electrodes.
[0030] Wherein, the concentration of the P- implantation layer 270 is lower than all the P-type implantation regions 211 and all the P+ implantation regi...
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Abstract
The invention discloses and provides a high-voltage and fast-recovery PIN diode and a manufacturing method thereof. The PIN diode comprises an N-type substrate, an N-type epitaxial layer, a plurality of P-type injection regions, a plurality of P+ injection regions, a P- injection layer and two metal layers, wherein the N-type epitaxial layer is formed on a surface of the N-type substrate, the plurality of P-type injection regions inwards extend from the surface of the N-type epitaxial layer, each P+ injection region is formed on a corresponding P-type injection region, the P- injection layer is formed on the surface of the N-type epitaxial layer, and the two metal layers are arranged at the bottom of the N-type substrate and on a surface of the P- injection layer to form electrodes. Improvement is made on the basis of an existing PIN diode, a P / P+ injection region is additionally arranged under the conventional-structure P-type injection layer, and a region between two P-type regions is used as a main conductive passage; compared with a conventional structure, the above structure has the advantages that the breakdown voltage of the device is increased, and the electric leakage is reduced; and under the condition of the same breakdown voltage, the concentration of a new-structure P-type region is lower than that of a traditional structure, and the forward voltage drop can be reduced.
Description
technical field [0001] The invention belongs to the field of semiconductor diode preparation, and in particular relates to a high-voltage fast recovery PIN diode and a manufacturing method thereof. Background technique [0002] Power diodes are key components of circuit systems, and are widely used in high-frequency inverters, digital products, generators, televisions and other civilian products, as well as satellite receivers, missiles and aircraft and other advanced weapon control systems and instrumentation equipment. Military occasions. Power diodes are expanding in two important directions: (1), developing to tens of millions or even tens of thousands of amperes, which can be applied to high-temperature arc wind tunnels, resistance welding machines, etc.; (2), the reverse recovery time is getting more and more Short, showing the development in the direction of ultra-fast, ultra-soft, and ultra-durable, so that it is not only used in rectification occasions, but also ha...
Claims
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IPC IPC(8): H01L21/329H01L29/868
CPCH01L29/6609H01L29/868
Inventor 杨东林河北郑方伟李龙杜永琴
Owner 深圳市金誉半导体股份有限公司