Semiconductor device and method of manufacturing same

Abstract

The invention provides a semiconductor device and a method of manufacturing the same, and relates to the technical field of semiconductors. The method includes the steps of providing a first substrate, and forming, on a side of a first surface of the first substrate, a radio frequency front-end device including a transistor and a first interconnect structure, and a second interconnect structure located on an outer side of the transistor; providing a second substrate, and bonding the second substrate with a side, on which the radio frequency front-end device is formed, of the first substrate by a bonding process; thinning the first substrate from a side of a second surface, opposite to the first surface, of the first substrate to a first substrate thickness; and forming a backside dielectric layer on the second surface, thinned to the first substrate thickness, of the first substrate, wherein, the first substrate thickness is more than 0.01 times of the minimum feature size of the transistor and less than 10 times of the maximum feature size of the transistor. The manufacturing method of the invention improves the radio frequency performance of the CMOS device by thinning the bulk silicon substrate.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] With the improvement of CMOS performance and the integration trend of wireless communication chips, the radio frequency (RF) CMOS process is not only a hot topic in academic research, but also attracts the attention of the industry. The biggest advantage of the RF CMOS process is that it can integrate components such as radio frequency, baseband and memory into a high degree of integration, and at the same time reduce component costs. [0003] RF CMOS technology generally can be divided into two categories: bulk silicon CMOS technology and silicon-on-insulator (SOI) CMOS technology. Among them, the bulk silicon CMOS process has a lower cost than the SOI CMOS process. However, in the traditional bulk silicon CMOS process, the radio frequency characteristics of the device are greatly re...

AI Technical Summary

Problems solved by technology

Among them, the bulk silicon CMOS process has a lower cost than the SOI CMOS process. However, in the traditional bulk silicon CMOS process, the radio frequency characteristics of the device are greatly reduced due to the influence of the substrate.

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