Pretreatment method for detecting boron element of silicon crystal by controlling digestion reaction heat with dry ice
A silicon crystal and reaction heat technology, which is used in thermal excitation analysis, preparation of test samples, material excitation analysis, etc. The effect of obvious retention, shortening detection cost and shortening detection time
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[0021] The present invention is described below based on examples, but the present invention is not limited to these examples.
[0022] The invention provides a pretreatment method for detecting silicon crystal boron element through controlled digestion reaction heat of dry ice, comprising the following steps:
[0023] a. Accurately weigh a certain amount of sample according to the actual impurity content of the sample and place it in a 100ml PTFE beaker. Parallel experiments are required;
[0024] b. Accurately add 5g of high-purity dry ice, the purity of which is 99.995%;
[0025] c. Accurately measure 5.0ml of hydrofluoric acid and add it to the beaker, adding it carefully;
[0026] d. Finally, slowly add 2.0ml of 70% nitric acid, the phenomenon is severe, so be careful to add it dropwise;
[0027] e. React until the sample is completely dissolved;
[0028] f. Volatile silicon at low temperature, constant volume after acidity adjustment, ICP-AES detection.
[0029] The ...
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