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Double patterning technology patterning magnetic tunnel junction method

A magnetic tunnel junction and technical pattern technology, which is applied in the manufacture/processing of electromagnetic devices, can solve problems such as enlarged size, excessive consumption of Ta film layers, and abnormal transfer patterns, so as to reduce the risk of short circuit and benefit The effect of miniaturization

Active Publication Date: 2017-11-28
SHANGHAI CIYU INFORMATION TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The technical problems to be solved by the present invention are: PR bending and lodging, unable to transfer patterns to MTJ units normally, MTJ patterns become larger in size when transferring double-layer masks, and Ta film layer is excessively consumed in advance, etc.

Method used

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  • Double patterning technology patterning magnetic tunnel junction method
  • Double patterning technology patterning magnetic tunnel junction method
  • Double patterning technology patterning magnetic tunnel junction method

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Embodiment Construction

[0045] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that all the drawings of the present invention are in simplified form and use inaccurate scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0046] A double patterning technology (DPT) patterned magnetic tunnel junction method of the present invention includes but is not limited to the preparation of magnetic random access memory (MRAM), and is not limited to any process sequence or flow, as long as the prepared product or device is in accordance with the following preferred The same or similar process sequence or process preparation results. Such as figure 1 As shown, the method includes:

[0047] Step S1: Provide a substrate with an MTJ ...

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Abstract

The invention provides a double patterning technology patterning magnetic tunnel junction method. The double-patterning technology patterning magnetic tunnel junction method comprises steps of providing a substrate having an MTJ multi-layer film structure, successively forming a Ta film layer and a dielectric film layer on the substrate, adopting a pattern which is reverse from the MTJ to perform patterning definition, performing pruning on the defined image reverse from the MTJ, performing etching on the BRAC, transferring the image reverse from the MTJ to the dielectric film layer to form a reverse pattern substrate, depositing a layer of dielectric substances on the pattern substrate, wherein the pattern is reverse from the MTJ, performing return-etching on the dielectric substance, performing oxygen dry etching technology to remove PR and the BRAC in order to finish patterning definition on th MTG, using a reaction ion beam to etch a double-layer mask which is defined by patterning to enable the pattern to smoothly transfer to the MTJ film layer and adopting gases like CH3O to perform dry etching on the MTG mask layer in order to finish MTJ patterning.

Description

technical field [0001] The present invention relates to a method for patterning a magnetic tunnel junction (MTJ, Magnetic Tunnel Junction), in particular to a method for patterning a magnetic tunnel junction using a double patterning technology (DPT, Double Patterning Technology), belonging to a magnetic random access memory (MRAM, Magnetic Radom Access Memory) manufacturing technology field. Background technique [0002] In recent years, MRAM using the magnetoresistance effect of MTJ is considered to be the future solid-state non-volatile memory, which has the characteristics of high-speed reading and writing, large capacity and low energy consumption. Ferromagnetic MTJ is usually a sandwich structure, which has a magnetic memory layer, which can change the magnetization direction to record different data; an insulating tunnel barrier layer in the middle; a magnetic reference layer, located on the other side of the tunnel barrier layer, which The direction of magnetization...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/12H10N50/01
CPCH10N50/01
Inventor 张云森
Owner SHANGHAI CIYU INFORMATION TECH CO LTD