Preparation method of magnetic tuning junction tantalum mask
A magnetic tunnel junction and mask technology, which is applied in the manufacture/processing of electromagnetic devices, magnetic field-controlled resistors, etc., can solve problems such as excessive consumption of tantalum mask layers, and achieve the effect of reducing the risk of short circuit
Active Publication Date: 2018-01-05
SHANGHAI CIYU INFORMATION TECH
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Problems solved by technology
[0010] In view of the problems existing in the prior art, the purpose of the present invention is to provide a method for preparing a magnetic tunnel junction tantalum mask, by using selective etching to etch the tantalum mask film layer that is not covered by the silicide seed layer. Depositing a layer of silicide film on the silicide seed layer fundamentally solves the problem that the tantalum mask layer is excessively consumed in advance during the pattern transfer process of the tantalum mask, and reduces the top electrode and MRAM circuit. The risk of MTJ unit short circuit, especially suitable for making MRAM circuits of 65nm and below
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[0036] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that all the drawings of the present invention are in simplified form and use inaccurate scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0037] Such as figure 1 , figure 2 Shown, the preparation method of the magnetic tunnel junction tantalum mask of an embodiment of the present invention, comprises the following steps:
[0038] (1) sequentially depositing and forming a tantalum mask layer 101 and a silicide seed layer 102 on the substrate 100;
[0039] (2) Patterning the magnetic tunnel junction pattern transferred to the top of the silicide seed layer 102;
[0040] (3) Etching the silicide seed layer 102 and part of the tantalum ma...
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Abstract
The present invention provides a preparation method of a magnetic tuning junction tantalum mask. The method comprises the following steps: performing deposition on a substrate in order to form a tantalum mask film layer and a silicide seed layer; performing graphical transferring of a magnetic tuning junction pattern to the top of the silicide seed layer; employing a reaction ion beam to etch thesilicide seed layer and part of the tantalum mask film layer; performing selective etching, performing etching at the tantalum mask film layer which is not coated with the silicide seed layer, and performing deposition again of one silicide film layer at the silicide seed layer; and removing the silicide film layer and most of the silicide seed layer, and performing trimming of the tantalum mask film layer. The preparation method of a magnetic tuning junction tantalum mask performs selective etching to fundamentally solve the problem that a tantalum mask is excessively consumed in advance in the process of graphical transferring of a tantalum mask and reduce a risk of an MRAM (Magnetic Radom Access Memory) circuit short circuit, and is especially suitable for preparation of an MRAM circuitwith 65nm and below 65nm.
Description
technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for preparing a magnetic tunnel junction (MTJ, Magnetic Tuning Junction) tantalum mask. Background technique [0002] In recent years, Magnetic Random Access Memory (MRAM, Magnetic Radom Access Memory) using the magnetoresistance effect of Magnetic Tunnel Junction (MTJ) is considered to be the future solid-state non-volatile memory, which has high-speed reading and writing, large capacity and low energy consumption. consumption characteristics. [0003] Ferromagnetic MTJ is usually a sandwich structure, which has a magnetic memory layer, which can change the magnetization direction to record different data; an insulating tunnel barrier layer in the middle; a magnetic reference layer, located on the other side of the tunnel barrier layer, which The direction of magnetization remains unchanged. [0004] In order to record information in this magnetoresisti...
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IPC IPC(8): H01L43/12H01L43/08H10N50/01H10N50/10
Inventor 张云森
Owner SHANGHAI CIYU INFORMATION TECH