Aluminum Nitride Barrier Layer

Abstract

A method of forming features in a dielectric layer is described. Vias, trenches or dual damascene structures can be present in the dielectric layer prior to deposition of the conformal aluminum nitride layer. The conformal aluminum nitride layer is configured to act as a barrier layer to prevent diffusion across the barrier layer. The method of forming the aluminum nitride layer involves alternating exposure to two precursor processes (eg, ALD) in order to achieve a high degree of conformality. The high conformality of the aluminum nitride barrier layer enables reduced thickness and increased effective conductivity of subsequent interstitial metal layers.

Description

technical field [0001] Embodiments disclosed herein relate to forming damascene structures for microelectronic devices. Background technique [0002] The low-k dielectric is a silicon dioxide (SiO 2 ) Those with a small dielectric constant. Silicon dioxide has a dielectric constant of 3.9. Low-k dielectric materials are positioned between conductive elements in integrated circuits to increase achievable switching speeds and reduce power dissipation as feature sizes decrease. Low-k dielectric films are achieved by selecting film materials that reduce the dielectric constant and / or inserting pores within the film. [0003] In addition to reducing the dielectric constant, the conductivity of conductive elements (eg, metal lines) can be increased. Consequently, copper has replaced many other metals for longer lines (interconnects). Copper has lower resistivity and higher ampacity. However, precautions must be taken to prevent copper from diffusing into surrounding material...

AI Technical Summary

Problems solved by technology

However, precautions must be taken to prevent copper from diffusing into surrounding materials

Images