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Method of using a memory device, memory device and memory device assembly

A storage device, data storage device technology, applied in the direction of error correction/detection using block codes, static memory, error correction/detection using convolutional codes, etc.

Active Publication Date: 2017-12-01
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] This temperature applied during soldering can cause stress in the memory device that is high enough to result in an unacceptable probability of data loss for RRAM

Method used

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  • Method of using a memory device, memory device and memory device assembly
  • Method of using a memory device, memory device and memory device assembly
  • Method of using a memory device, memory device and memory device assembly

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Experimental program
Comparison scheme
Effect test

Embodiment approach

[0114] According to various embodiments, column code C 2 can have a generating matrix

[0115]

[0116] and H matrix

[0117]

[0118] exist Figure 3A address a in 15 、a 16 、a 17 , no specific value is stored, and the individual memory cells are marked with the symbol "-". Code C 2 It may be a Hsiao code (Xiao code), which is known to those skilled in the art and may allow correction of all 1-bit errors in components of data bits forming a column, and detection of all 2-bit errors in such a column. H matrix H 2 All columns of are pairwise different from each other and contain an odd number of 1s (the number 1).

[0119] exist Figure 3A to Figure 3F In, the data bit It can be considered as corresponding to the above data unit 102, the parity bit c of the row code i can be considered to correspond to the parity unit 104, and the bit It may correspond to the extra ECC, that is, to the check digit of the second code.

[0120] exist Figure 3B In , the case ...

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PUM

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Abstract

In various embodiments, a method of using a memory device is provided. The method may include storing data units, check units of a first code and check units of a second code in memory cells of the memory device, wherein the data units and the check units of the first code form code words of the first code, and wherein the data units and the check units of the second code form code words of the second code, applying the second code for error correction in at least a portion of the data units and / or in at least a portion of the check units of the first code, after the correcting the errors, retaining at least a retaining portion of the data units and of the check units of the first code and deleting at least a deleting portion of the check units of the second code, thereby freeing the memory cells that are occupied by the deleting portion of the check units of the second code, and during a subsequent using of the memory device, storing data in at least a reuse portion of the freed-up memory cells.

Description

technical field [0001] Various embodiments generally relate to a method of correcting errors in a storage device, storage devices, and storage device components. Background technique [0002] Memory devices such as non-volatile memory devices (eg, RRAM memory devices including RRAM (Resistive Random Access Memory) memory cells, also referred to as RRAM cells) typically may not be very stable when high temperature stress is applied. This means that the probability of an RRAM memory cell losing its information can rise dramatically with temperature. In typical consumer and industrial applications, the maximum temperature may be limited to values ​​acceptable to RRAM during the lifetime of the memory device or chip that may include the memory device. However, packaged chips often may have to be soldered when the board is assembled. During soldering, temperatures of typically 260°C are used for up to several minutes. [0003] This temperature applied during soldering can caus...

Claims

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Application Information

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IPC IPC(8): G11C29/52G11C29/42
CPCG11C29/42G11C29/52H03M13/1102H03M13/1108H03M13/136H03M13/1515H03M13/152H03M13/23H03M13/2903H03M13/2906H03M13/2909H03M13/2957G06F11/1012G06F3/0604G06F3/0659G06F3/0673G06F11/1044H03M13/13
Inventor 简·奥特斯泰特迈克尔·格塞尔托马斯·克恩托马斯·拉贝纳尔特
Owner INFINEON TECH AG