Color filtering substrate and manufacturing method thereof
A technology for a color filter substrate and a manufacturing method, which is applied in the fields of color filter, optics, photovoltaic power generation, etc., can solve the problems of increased cost, inability to save power, and the battery becomes larger and does not meet the thinner and thinner display devices. The effect of small thickness
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Embodiment 1
[0038] see figure 1 , the color filter substrate 100 includes a glass substrate 1, a first electrode layer 2, a light-shielding structure 3, a second electrode layer 4, a color filter layer 5, a flat layer 6, a common electrode layer 7, and an OC glue layer 8, so The first electrode layer 2 is disposed on the glass substrate 1, and the light-shielding structure 3 is formed on the first electrode layer 2 and located on the side of the first electrode layer 2 away from the glass substrate 1. The second electrode layer 4 is formed on the black silicon layer and is located on the side of the black silicon layer away from the first electrode layer 2, and the first electrode layer 2, the The black silicon layer and the second electrode layer 4 form a photovoltaic cell, and the photovoltaic cell is provided with a plurality of through holes, and the color filter layer 5 includes a plurality of color photoresists arranged on the glass substrate 1 51, the color photoresist 51 is locat...
Embodiment 2
[0051] see image 3 , the color filter substrate 200 includes a glass substrate 10, a first electrode layer 20, a light shielding structure 30, a second electrode layer 40, a color filter layer 50, a flat layer 60, a common electrode layer 70 and an OC glue layer 80, so The first electrode layer 20 is disposed on the glass substrate 10, and the light shielding structure 30 includes a light shield formed on the first electrode layer 20 and located on a side of the first electrode layer 20 away from the glass substrate 10. Black silicon layer 310 and black matrix 330, the second electrode layer 40 is formed on the black silicon layer 310 and located on the side of the black silicon layer 310 away from the first electrode layer 20, the black matrix 330 Formed on the second electrode layer 40 and located on the side of the second electrode layer 40 away from the black silicon layer 310, and the first electrode layer 20, the black silicon layer and the second electrode The layer 4...
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