Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for coating semiconductor wafers

A semiconductor, coating technology, applied in chemical instruments and methods, coatings, crystal growth, etc., can solve problems such as harmful quality of semiconductor wafers

Active Publication Date: 2020-05-05
SILTRONIC AG
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Especially in the edge area of ​​the coating there are large differences which are detrimental to the quality of the coated semiconductor wafers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for coating semiconductor wafers
  • Method for coating semiconductor wafers
  • Method for coating semiconductor wafers

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] figure 1 By way of example and schematically, an epitaxial reactor 100 is shown in cross-section with which, for example, the method according to the invention can be carried out. In the middle of the epitaxial reactor 100 there is a susceptor 110 on which a semiconductor wafer 120 to be coated, eg a silicon wafer, can be arranged, ie placed. Depending on the size of the epitaxial reactor, for example, in this case the semiconductor wafer may have a diameter of up to 450 mm. In this case, the susceptor 110 has a central depression, so that the semiconductor wafer 120 rests on the susceptor 110 only in the region of a few millimeters from its edge, for example.

[0029]Gases can pass through the epitaxial reactor 100, in this example from the opening on the left hand side of the epitaxial reactor 100 to the opening on the right hand side, as indicated by the two arrows. By means of heat generating means such as heating lamps 130 on the upper and lower sides of the epit...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for separately coating semiconductor wafers (120) with an epitaxially deposited layer in an epitaxial reactor (100), wherein during the coating process at least one semiconductor wafer (120) is arranged on a corresponding substrate seat (110), and the first deposition gas for coating the at least one semiconductor wafer (120) passes through the epitaxial reactor (100), and wherein a cleaning process is carried out correspondingly after a plurality of coating processes, wherein a first etching gas and subsequently a second deposition gas are passed through the epitaxial reactor (100), wherein at least one intermediate cleaning process is carried out between two successive cleaning processes, wherein between two immediately successive coating processes During the interval, the second etching gas is passed through the epitaxial reactor (100), while no deposition gas is passed through the epitaxial reactor (100).

Description

technical field [0001] The invention relates to a method for separately coating semiconductor wafers with epitaxially deposited layers in an epitaxial reactor. Background technique [0002] Epitaxially coated semiconductor wafers, in particular silicon wafers, are suitable, for example, for use in the semiconductor industry, especially for the manufacture of densely integrated electronic components, such as microprocessors or memory chips. For modern microelectronics, starting materials (so-called substrates) are necessary with stringent requirements for global and local flatness, edge geometry, thickness distribution, local flatness with reference to one side (so-called nanotopology) and defect-free . [0003] For the epitaxial coating of the semiconductor wafer in the epitaxial reactor, deposition gases are passed through the epitaxial reactor so that epitaxial material can be deposited on the surface of the semiconductor wafer. However, as well as on semiconductor wafer...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/44
CPCC23C16/4404C23C16/4405C30B25/02
Inventor J·哈贝雷希特C·哈格尔
Owner SILTRONIC AG