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Systems and methods for semiconductor metrology and surface analysis using secondary ion mass spectrometry

A technology of secondary ion mass spectrometer and analyzer, which is applied in the fields of material analysis by measuring secondary emissions, material analysis by wave/particle radiation, semiconductor/solid-state device testing/measurement, etc.

Active Publication Date: 2019-11-08
NOVA MEASURING INSTR LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The primary ion beam is directed to the sample stage
Extraction lens aligned to sample stage

Method used

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  • Systems and methods for semiconductor metrology and surface analysis using secondary ion mass spectrometry
  • Systems and methods for semiconductor metrology and surface analysis using secondary ion mass spectrometry
  • Systems and methods for semiconductor metrology and surface analysis using secondary ion mass spectrometry

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Embodiment Construction

[0031] Systems and methods for semiconductor metrology and surface analysis using secondary ion mass spectrometry (SIMS) are described. In the following description, numerous specific details are set forth, such as SIMS analysis techniques and system configurations, in order to provide a thorough understanding of embodiments of the invention. It will be apparent to those skilled in the art that embodiments of the invention may be practiced without these specific details. In other instances, well-known features, such as overall semiconductor device stacks, have not been described in detail so as not to unnecessarily obscure embodiments of the invention. Furthermore, it should be understood that the various embodiments shown in the figures are exemplary representations and are not necessarily drawn to scale.

[0032] In a first aspect, embodiments of the invention relate to systems and methods for characterizing and process controlling structures on semiconductor wafers during ...

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Abstract

Systems and methods for semiconductor metrology and surface analysis using secondary ion mass spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. The primary ion beam is directed to the sample stage. Align the extraction lens with the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from the sample on the sample stage. A magnetic sector spectrometer is coupled to the extraction lens along the optical path of the SIMS system. The magnetic sector spectrometer includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).

Description

[0001] References to related applications [0002] This application claims the benefit of US Provisional Application No. 62 / 114,521, filed February 10, 2015, the entire contents of which are incorporated herein by reference. This application also claims the benefit of US Provisional Application No. 62 / 114,519, filed February 10, 2015, the entire contents of which are incorporated herein by reference. This application also claims the benefit of US Provisional Application No. 62 / 114,524, filed February 10, 2015, the entire contents of which are incorporated herein by reference. technical field [0003] Embodiments of the invention are in the field of semiconductor metrology, and in particular systems and methods of semiconductor metrology and surface analysis using secondary ion mass spectrometry (SIMS). Background technique [0004] Secondary ion mass spectrometry (SIMS) is a technique used to analyze the composition of solid surfaces and thin films by sputtering the surface...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J49/14H01L21/66
CPCH01J49/142H01L22/12G01N23/22H01J49/126G01N23/2258G01Q10/04H01J49/26
Inventor 戴维·A·雷德布鲁诺·W·许勒尔布鲁斯·H·纽科姆罗德尼·斯梅德特克里斯·贝维斯
Owner NOVA MEASURING INSTR LTD