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Memory, its manufacturing method, and semiconductor device

A manufacturing method and memory technology, applied to semiconductor devices, electric solid-state devices, transistors, etc., can solve the problem of too large resistance value of bit line plugs, and achieve the effect of avoiding the increase of resistance value

Inactive Publication Date: 2018-07-20
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a memory, its manufacturing method and semiconductor device, so as to solve the problem that the resistance value of the bit line plug formed by the existing technology is relatively large

Method used

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  • Memory, its manufacturing method, and semiconductor device
  • Memory, its manufacturing method, and semiconductor device
  • Memory, its manufacturing method, and semiconductor device

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Embodiment Construction

[0057] The memory, its manufacturing method and semiconductor device proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0058] First, please refer to figure 1 , which is a schematic cross-sectional view of a memory. like figure 1 As shown, the memory 1 includes:

[0059] A substrate 10, the substrate 10 includes a unit area 10a and a peripheral area 10b outside the unit area 10a, a dielectric layer 11 is formed on the substrate of the unit area 10a, in the dielectric layer 11 A bit line contact opening 12 is formed;

[0060] a bit line plug 13, the bit l...

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Abstract

The present invention provides a memory, its manufacturing method and a semiconductor device. Before performing etching to form a bit line in a cell region, the bit line plug (the side surface) is protected by a protective layer, and the bit line is formed by etching At this time, although the etching depths of the cell area and the peripheral area are different, the side etching of the bit line plug in the cell area will not occur, thereby avoiding the increase of the resistance value of the bit line plug.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a memory, its manufacturing method and a semiconductor device. Background technique [0002] The memory includes a unit area and a peripheral area outside the unit area. A plurality of storage units are formed in the unit area, and a peripheral circuit for controlling the storage units is formed in the peripheral area. The storage unit mainly includes a capacitor and a transistor, wherein the capacitor is used to store data, and the transistor is used to control access to the data stored in the capacitor. Specifically, the word line (word line) of the memory is electrically connected to the gate of the transistor, and the word line controls the switch of the transistor; and, the source of the transistor is electrically connected to the bit line (bit line ) to form a current transmission path; at the same time, the drain of the transistor is electrically conne...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/108
CPCH10B12/30H10B12/03H10B12/50
Inventor 不公告发明人
Owner CHANGXIN MEMORY TECH INC