A plasma immersion ion implantation doping device and its application
A technology of immersion ion implantation and plasma, which is applied in the field of doping of semiconductor materials or devices, can solve the problems of high cost, complex structure, and adverse consequences of materials, and achieve the effects of low cost, improved purity, and simple structure
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[0039] The present invention will be further described in detail through the embodiments below in conjunction with the accompanying drawings.
[0040] Such as figure 1 As shown, the parallel plate chamber plasma immersion ion implantation doping device includes: a vacuum chamber 13 , a plasma coupling window 2 located on the top of the vacuum chamber 13 , and a plasma generating unit 1 located above the plasma coupling window 2 . The upper plate 10 of the parallel plate chamber, that is, the upper substrate coated with a doped impurity deposition layer, is close to the plasma coupling window 2 above; the lower plate 11 of the parallel plate chamber, that is, the lower substrate coated with a doped impurity deposition layer, the lower Clinging to the insulator 4 on the hollow metal box 5. The hollow metal box 5 is located on the liftable support 7, and the cavity is filled with a temperature-controlled liquid, and its temperature is controlled at 0°C-300°C by a liquid circulat...
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