Thin film forming apparatus

Abstract

According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, including: supplying a CVD (Chemical Vapor Deposition) raw material gas onto a surface of a substrate, irradiating the supplied raw material gas with laser light, A thin film forming apparatus for forming a thin film on a substrate, comprising: a chamber unit provided on the substrate; a chamber supply unit for supplying a source gas to the chamber unit; a gas supplying unit and a second exhaust unit for exhausting a gas and a raw material gas, wherein a gas flow in the gas retention chamber is formed in a gas retention chamber, a first exhaust unit for exhausting a raw material gas discharged from the gas retention chamber, forming means for forming a uniform pressure in all directions of the gas retention chamber is formed in order to make the gas retention chamber uniform It is a ball.

Description

technical field [0001] The present invention relates to a thin film forming apparatus, and more particularly, to a thin film forming apparatus for correcting defects of substrates having a planar pattern structure such as photomasks and liquid crystal substrates. Background technique [0002] figure 1 is a cross-sectional view of a conventional thin film forming apparatus, figure 2 It is a top view of a conventional thin film forming apparatus, refer to Figure 1 to Figure 2 , in the conventional thin film forming apparatus, a chamber unit 20 is provided on the upper part of the substrate 1, and the chamber unit 20 includes: a raw material supply mechanism 30 for supplying raw material gas; a gas retention chamber 40 for making the above-mentioned The raw material gas supplied by the raw material supply mechanism 30 is retained; the first exhaust part 50 is used to discharge the raw material gas discharged from the gas retention chamber 40; the first gas discharge part 60...

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Problems solved by technology

[0003] On the same parallel line 2 as the supply direction of the raw material gas supplied to the gas retention chamber 40 , the first exhaust part 50 , the first gas discharge part 60 and the second exhaust part are formed to the rear of the supply direction of the raw material gas. Two exhaust parts 70, thereby forming a gas flow (gas flow) on the 3 / 4 bisecting surface of the above-mentioned chamber unit 20. Since the pressure of the gas retention chamber 40 is unbalanced, the amount of raw material gas flowing to the position of the laser less, resulting in low reactivity

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