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Process of filling the high aspect ratio trenches by co-flowing ligands during thermal CVD

A high aspect ratio, ligand technology, applied in metal material coating process, semiconductor/solid-state device manufacturing, coating, etc.

Active Publication Date: 2018-01-02
APPLIED MATERIALS INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Additionally, conformal deposition often results in weak spots or gaps in structures with vertical walls

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  • Process of filling the high aspect ratio trenches by co-flowing ligands during thermal CVD
  • Process of filling the high aspect ratio trenches by co-flowing ligands during thermal CVD
  • Process of filling the high aspect ratio trenches by co-flowing ligands during thermal CVD

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[0014] The following disclosure describes processes for depositing thin films and apparatus for performing the foregoing processes. Some details are described below and in Figure 1 to Figure 4 set forth in order to provide a thorough understanding of various implementations of the present disclosure. Additional details describing well-known methods and systems commonly associated with thin film deposition are not set forth in the following disclosure in order to avoid unnecessarily obscuring the description of various implementations.

[0015] Many of the details, components and other features described herein are merely illustrations of particular implementations. Accordingly, other implementations may have other details, components, and features without departing from the spirit or scope of the present disclosure. Additionally, further implementations of the disclosure may be practiced without several of the details described below.

[0016] The development of thin film ...

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Abstract

Implementations of the present disclosure generally relate to methods for forming thin films in high aspect ratio feature definitions. In one implementation, a method of processing a substrate in a process chamber is provided. The method comprises flowing a boron-containing precursor comprising a ligand into an interior processing volume of a process chamber, flowing a nitrogen-containing precursor comprising the ligand into the interior processing volume and thermally decomposing the boron-containing precursor and the nitrogen-containing precursor in the interior processing volume to deposita boron nitride layer over at least one or more sidewalls and a bottom surface of a high aspect ratio feature definition formed in and below a surface of a dielectric layer on the substrate.

Description

technical field [0001] Implementations of the present disclosure generally relate to methods for forming thin films in high aspect ratio feature definition. Background technique [0002] Many deposition processes have difficulty filling the small trenches and other interstitial features used in current semiconductor processing schemes. The principal dimensions of individual trenches and other gap-type features produced in any given technology node are significantly smaller than the critical dimensions defining current technology. Therefore, gaps on the order of 100nm or less are not uncommon. Feature sizes will shrink to even smaller dimensions in the coming years. Gaps pinch off at their necks unless the process is extremely conformal. What solves the problem is the fact that many gaps have relatively high aspect ratios (eg, at least 5:1). Examples of situations where high aspect ratio dimensions and geometries may be found include copper damascene processes, shallow tr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L21/285C23C16/46C23C16/34C23C16/16C23C16/04
CPCH01L21/28556H01L21/76877C23C16/045C23C16/16C23C16/342C23C16/46H01L21/02205H01L21/02269H01L21/76846H01L21/76864
Inventor P·曼纳程睿K·陈A·B·玛里克
Owner APPLIED MATERIALS INC
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