A kind of ldmos device with stepped trench

A stepped, trench technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of substrate depletion, substrate-assisted depletion, inability to optimize the electric field in the drift region, etc., and achieve vertical electric field distribution. Uniform and improve the effect of reverse blocking voltage
CN107546274BActive Publication Date: 2020-01-17UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
UNIV OF ELECTRONICS SCI & TECH OF CHINA
Publication Date
2020-01-17

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Abstract

The present invention provides an LDMOS device with a stepped trench, comprising a first conductivity type semiconductor substrate, a first conductivity type semiconductor body region, a second conductivity type semiconductor drift region, a second conductivity type semiconductor source region, a highly doped The first conductivity type semiconductor body contact region, the gate structure, the gate structure includes a polysilicon gate electrode and a gate oxide layer, the inner upper surface of the second conductivity type semiconductor drift region also has a stepped trench, the bottom of the step and the second conductivity type The distance from the upper surface of the semiconductor drift region decreases gradually along the direction from the source region of the second conductivity type semiconductor to the drain region of the second conductivity type semiconductor, and polysilicon is filled in the stepped groove. The vertical electric field distribution in the region is more uniform, and the reverse blocking voltage of the device is improved.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor devices, in particular to an LDMOS device with stepped trenches. Background technique

[0002] Metal oxide power MOS semiconductor devices, with the rapid development of the semiconductor industry, power electronics technology represented by high-power semiconductor devices has developed rapidly, and its application fields have continued to expand, such as the control of AC motors and printer drive circuits. Among various power devices today, laterally diffused MOS devices (LDMOS) have the advantages of high operating voltage and easy integration, so they are widely used.

[0003] In the design of LDMOS devices, the breakdown voltage and on-resistance have always been the main goals that people pay attention to when designing such devices. The thickness of the epitaxial layer, doping concentration, and the length of the drift region are the most important parameters of LDMOS. Conventional L...

Claims

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